Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Subodh Taigor"'
Autor:
Debasish Dwibedy, Sulagna Dey, Prashant Swarnkar, Patrick Hong, Mitsuyuki Watanabe, Koichiro Hayashi, Jiawei Tao, Chang Siau, Juan Lee, Kapil Verma, Jonathan Huynh, Subodh Taigor, William Mak, Takuya Ariki, Yoshihiko Kamata, Zameer Papasaheb, Hiroyuki Mizukoshi, Takuyo Kodama, Toru Miwa, Norihiro Kamae, Trung Pham, Naoki Ookuma, Ryuji Yamashita, Ching-Huang Lu, Meiling Wei, Tsutomu Higuchi, Hitoshi Miwa, Masahide Matsumoto, Rangarao Samineni, Farookh Moogat, Yuzuru Namai, Yingda Dong, Vivek Saraf, Shunichi Toyama, Muralikrishna Balaga, Aditya Pradhan, Hiroki Yabe, Minoru Yamashita, Sung-En Wang, Kazuhide Yoneya, Ying Yu, Samiksha Agarwal, Gopinath Balakrishnan, Thushara Xavier, Manabu Sakai, Xiaohua Zhang, Yuko Utsunomiya, Yosuke Kato, Sahil Deora, Shuo Chen, Yankang He, Sagar Magia, Akshay Petkar, Hardwell Chibvongodze, Swaroop Kulkarni, Shingo Zaitsu, Toshio Yamamura
Publikováno v:
ISSCC
High floating-gate (FG) to FG coupling and lithography limitations have been preventing 2D-NAND flash from further reduction in die size, (e.g., there is no ISSCC paper discussing a 3b/cell 2D-NAND after 2013 [1,2]). Alternatively, since high-density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::695c61bd386f24bc627c57ec2303193d
https://doi.org/10.1109/isscc.2017.7870328
https://doi.org/10.1109/isscc.2017.7870328
Autor:
Sridhar Yadala, T. Ip, James Lan, Sharon Huynh, C. Liang, J. Lakshmipathi, Khanh Nguyen, Hung-Szu Lin, D. Pantelakis, Mehrdad Mofidi, Teruhiko Kamei, Long Pham, Siu Chan, Jeffrey W. Lutze, V. Sakhamuri, Jason Li, Jong Hak Yuh, Junnhui Yang, Koichi Kawakami, Kishan Pradhan, Yan Li, P. Kliza, Masaaki Higashitani, James Chan, Khin Htoo, Tai-Yuan Tseng, Alan Li, Yasuyuki Fukuda, Binh Quang Le, Shu-Fen Chang, Raul Adrian Cernea, Khandker N. Quader, Hideo Mukai, Subodh Taigor, Shouchang Tsao, Yingda Dong, Takumi Abe, Farookh Moogat, Fanglin Zhang, H. Nasu, Cynthia Hsu, Jayson Hu, Feng Pan
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:186-194
A 16 Gb 4-state MLC NAND flash memory augments the sustained program throughput to 34 MB/s by fully exercising all the available cells along a selected word line and by using additional performance enhancement modes. The same chip operating as an 8 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::980db025a0a03d7fcad3f78887bc65af
https://doi.org/10.1109/jssc.2008.2007152
https://doi.org/10.1109/jssc.2008.2007152
Autor:
D. Pantelakis, Hung-Szu Lin, K. Kawakamr, P. Kliza, Kishan Pradhan, Shu-Fen Chang, Jason Li, Masaaki Higashitani, Sridhar Yadala, Feng Pan, Jong Park, Jayson Hu, Junhui Yang, Takumi Abe, Yan Li, Khin Htoo, Khanh Nguyen, Farookh Moogat, Fanglin Zhang, Binh Quang Le, V. Sakhamuri, Raul-Adrian Cernea, Siu Chan, H. Mukai, H. Nasu, Cynthia Hsu, Khandker N. Quader, Tai-Yuan Tseng, Yasuyuki Fukuda, Yingda Dong, Shouchang Tsao, Subodh Taigor, Long Pham, Jeffrey W. Lutze, James Chan, A. Li, T. Ip, Teruhiko Kamei, James Lan, J. Lakshmipathi, C. Liang, Mehrdad Mofidi, Sharon Huynh
Publikováno v:
ISSCC
In the diverse world of NAND flash applications, higher storage capacity is not the only imperative. Increasingly, performance is a differentiating factor and is also a way of creating new markets or expanding existing markets. While conventional mem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbed9141e70c4fcd75fd32d318e69dcc
https://doi.org/10.1109/isscc.2008.4523236
https://doi.org/10.1109/isscc.2008.4523236