Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Submicrometer MOSFET's"'
Publikováno v:
Active and Passive Electronic Components, Vol 24, Iss 3, Pp 201-209 (2001)
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel lengt
Externí odkaz:
https://doaj.org/article/b4deff4f40e94cee84e83232c8df57c4
Publikováno v:
Active and Passive Electronic Components, Vol 24, Iss 3, Pp 201-209 (2001)
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel lengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67c19c39f0eacbb30c9caf9c311c5e77