Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Subir Kumar Maity"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
Abstract A vertical tunneling field effect transistor composed of a doping-less tunneling heterojunction and an n+-drain is presented in this paper. Two highly-doped p+ silicon layers are devised to induce holes in an intrinsic source region. Due to
Externí odkaz:
https://doaj.org/article/e9d2362f8b7145d189fa7af5cd9c974a
Publikováno v:
Optik. 282:170836
Publikováno v:
Pramana. 96
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 36
Autor:
Subir Kumar Maity, Soumya Pandit
This work presents a data-driven regression model of inversion layer capacitance of double gate III-V channel MOSFETs implemented using an artificial neural network. The training dataset is generated using a Schroedinger-Poisson solver for different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a23b19492951184da17c67db633a673
https://doi.org/10.21203/rs.3.rs-1423867/v1
https://doi.org/10.21203/rs.3.rs-1423867/v1
Publikováno v:
Micro and Nanostructures. 174:207477
Publikováno v:
Silicon. 13:2077-2087
Quadruple gate FinFET is a promising candidate among other multi-gate MOS devices due to it’s better scalability and higher short channel effect suppression capability in advanced technology node. In this work, we report the effect of temperature o
Autor:
Soumya Pandit, Subir Kumar Maity
Publikováno v:
Silicon. 13:1939-1949
In this work, with the help of extensive technology computer-aided design simulations, we report a comprehensive study of MOSFET based circuit design using ultra-thin body III-V on-insulator (OI) CMOS transistors. We demonstrate the circuit performan
Publikováno v:
IEEE Transactions on Electron Devices. 67:2282-2289
In this article, we report a physics-based compact model of drain current for InAs-on-insulator MOSFETs. The quantum confinement effect has been incorporated in the proposed model by solving the 1-D Schrodinger–Poisson equations without using any e