Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Subhash R. Nariani"'
Autor:
Calvin T. Gabriel, Subhash R. Nariani
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:990-994
Antenna structures are commonly used to study charging, and the resultant metal–oxide–semiconductor gate oxide damage, from plasma processing. Degradation of various device parameters, such as gate leakage and threshold voltage, have been correla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b41daccb1ffa59c3b6e55fe0ee6875e3
https://doi.org/10.1116/1.580068
https://doi.org/10.1116/1.580068
Publikováno v:
IEEE Electron Device Letters. 17:145-147
Based on a new empirical mobility model which is solely dependent on V/sub gs/, V/sub t/ and T/sub ox/, a corresponding semiempirical I/sub dsat/ model for n-MOSFET including velocity saturation, mobility degradation due to increased vertical effecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e22771eede21d7626d3267443731b7a9
https://doi.org/10.1109/55.485195
https://doi.org/10.1109/55.485195
Autor:
Subhash R. Nariani, C.T. Gabriel
Publikováno v:
IEEE Electron Device Letters. 16:242-244
A new wafer-level measurement technique, the differential gate antenna analysis, has been developed to detect weaknesses in sub-micrometer oxide. This simple technique involves the use of dual antenna structures with different gate oxide areas but th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98305419cb8d2ebf1d274ea8d13b1ea9
https://doi.org/10.1109/55.790722
https://doi.org/10.1109/55.790722
Autor:
R. Wong, Kuang-Yeh Chang, David P. Chan, William J. Boardman, Calvin T. Gabriel, Vivek Jain, Subhash R. Nariani, K. Gordon
Publikováno v:
[1992] Proceedings. Fifth Annual IEEE International ASIC Conference and Exhibit.
Amorphous silicon has been used as a programmable material for a metal-to-metal anti-fuse. A study on the characteristics of such an anti-fuse and the parameters that affect its programming characteristics is presented. In the unprogrammed state the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ded6f96a2bc2f5cbfa758abab7b328b
https://doi.org/10.1109/asic.1992.270296
https://doi.org/10.1109/asic.1992.270296
Publikováno v:
Proceedings of IEEE Custom Integrated Circuits Conference - CICC '94.
A programmable anti-fuse, using amorphous silicon between levels of metal, is studied. The step coverage of the a-Si has the most significant impact on the anti-fuse characteristics. Other critical process parameters are also identified. The anti-fus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6494c22d96d17915519cd9c5b23a7e3a
https://doi.org/10.1109/cicc.1994.379677
https://doi.org/10.1109/cicc.1994.379677
Publikováno v:
1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference.
The impact of the PECVD IMO film on hot carrier reliability of sub-micron MOS devices has been studied. It has been shown, for the first time, that modifying the PECVD IMO film can result in more than an order of magnitude improvement in the hot carr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::746f25e378dcd675f7bb8c4f7ee9722e
https://doi.org/10.1109/vmic.1991.152999
https://doi.org/10.1109/vmic.1991.152999
Publikováno v:
Proceedings International Conference on Microelectronic Test Structures.
Gate antenna structures have been developed to detect charge induced process damage to sub-micron gate oxide. For the first time, this damage is correlated with product failure due to gate oxide in accelerated life testing. These antenna structures a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d24142e3d07a87c9d126a43caf02e75
https://doi.org/10.1109/icmts.1995.513952
https://doi.org/10.1109/icmts.1995.513952
Publikováno v:
30th International Reliability Physics Symposium.
The concept of internal passivation has been introduced as a means of suppressing device degradation due to backend processes. The proposed concept has been demonstrated by tailoring the composition of a PECVD (plasma-enhanced chemical vapor depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3251a14b50a6ba776a5c23b3844a4e8
https://doi.org/10.1109/irps.1992.363265
https://doi.org/10.1109/irps.1992.363265
Conference
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Conference
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