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pro vyhledávání: '"Subhas Chandra Bose"'
Autor:
Subhas Chandra Bose
Publikováno v:
Science and Culture. 89
Autor:
Prasad N. Achyutha, Sushovan Chaudhury, Subhas Chandra Bose, Rajnish Kler, Jyoti Surve, Karthikeyan Kaliyaperumal
Publikováno v:
Mathematical Problems in Engineering. 2022:1-9
The stock market prices of the company vary in a daily fashion. The social media pattern usage of the company can be determined to find the sentiment score values. The dependency factor between the social media tweet platform and the performance of a
Autor:
Subhas Chandra Bose, Ravi Kiran
Publikováno v:
Bioinformatics for agriculture: High-throughput approaches ISBN: 9789813347908
Agriculture plays an important role in Indian economy. In view of changes faced by agriculture due to globalization and increased demand for agri-foods, there is a need to relook at the marketing strategies. Digital marketing can play a significant r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acbcfb77ae9e863ed6505fa9df344f2e
https://doi.org/10.1007/978-981-33-4791-5_8
https://doi.org/10.1007/978-981-33-4791-5_8
Autor:
Subhas Chandra Bose, J.V., De Souza, M.M., Sankara Narayanan, E.M. *, Ensell, G., Pease, T.J., Humphery, J.
Publikováno v:
In Microelectronics Journal 1 April 2001 32(4):323-326
Autor:
Ngw, C.K., Sweet, M., Subhas Chandra Bose, J.V., Spulber, O., Luther King, N., Vershinin, K., De Souza, M.M., Sankara Narayanan, E.M. *
Publikováno v:
In Solid State Electronics 2001 45(1):127-132
Autor:
De Souza, M.M, Subhas Chandra Bose, J.V, Sankara Narayanan, E.M *, Pease, T.J, Ensell, G, Humphreys, J
Publikováno v:
In Solid State Electronics 2000 44(8):1381-1386
Autor:
J. Humphery, J.V. Subhas Chandra Bose, T.J. Pease, M.M. De Souza, G. Ensell, E.M. Sankara Narayanan
Publikováno v:
Microelectronics Journal. 32:323-326
A new termination structure, which incorporates metal field plate over every alternate low doped p well ring is presented for planar power devices. This structure is designed to control the punch through voltage between rings to increase the blocking
Autor:
J.V. Subhas Chandra Bose, K. Vershinin, N. Luther King, O. Spulber, E.M. Sankara Narayanan, C.K. Ngw, M. Sweet, M.M. De Souza
Publikováno v:
Solid-State Electronics. 45:127-132
The aim of this paper is to demonstrate, for the first time, the viability of the monolithic integration of low voltage components, such as n and p channel MOSFETs, onto a planar vertical MOS controlled power device. This approach paves the way for r
Publikováno v:
IEE Proceedings - Circuits, Devices and Systems. 148:79
A novel 1.2 kV, trench-planar insulated gate bipolar transistor (TPIGBT) is analysed in detail using numerical modelling techniques to evaluate the influence of the injection-enhancement (IE) effect. A major innovative aspect of the device is that th
Autor:
M. Sweet, E.M. Sankara Narayanan, J.V. Subhas Chandra Bose, L. Ngwendson, K. Vershinin, M.M. De Souza, O. Spulber
Publikováno v:
IEE Proceedings - Circuits, Devices and Systems. 148:75
For the first time, the authors demonstrated a new MOS gated thyristor called the clustered insulated gate bipolar transistor (CIGBT), which is formed by clustering power MOSFET cathode cells within common n- and p-wells. The n- and p-wells also prov