Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Subhamoy, Ghatak"'
Autor:
Paritosh Karnatak, T. Phanindra Sai, Srijit Goswami, Subhamoy Ghatak, Sanjeev Kaushal, Arindam Ghosh
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-8 (2016)
The performance of graphene field effect transistors is adversely affected by fluctuations in the electrical resistance at the graphene/metal interface. Here, the authors unveil the microscopic origin of such contact noise, highlighting the role of c
Externí odkaz:
https://doaj.org/article/95d32f108b3849d1910209b6e411b939
Autor:
Joydip Sarkar, Kishor V. Salunkhe, Supriya Mandal, Subhamoy Ghatak, Alisha H. Marchawala, Ipsita Das, Kenji Watanabe, Takashi Taniguchi, R. Vijay, Mandar M. Deshmukh
Josephson junctions (JJ) and their tunable properties, including their nonlinearities, form the core of superconducting circuit quantum electrodynamics (cQED). In quantum circuits, low-noise amplification of feeble microwave signals is essential and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c4cdbd522dc173d0edd010bf7d0cc7b
Autor:
Biswajit Datta, Raghav Dhingra, Rajib Mondal, Mandar M. Deshmukh, John Jesudasan, Arumugam Thamizhavel, Subhamoy Ghatak, Jaykumar Vaidya
We report on the fabrication of nano-devices on the \hkl[-1 0 1] surface of a Weyl semimetal, a macroscopic crystal of TaAs, and low-temperature transport measurements. We can implement electron beam lithography by peeling off and transferring the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::368f465d3344417d247098e66b9c7a62
http://arxiv.org/abs/2110.01793
http://arxiv.org/abs/2110.01793
Publikováno v:
APL Materials, Vol 2, Iss 9, Pp 092515-092515-7 (2014)
We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabr
Externí odkaz:
https://doaj.org/article/ccf6db2a13484df6954661762e08dc72
Autor:
Pulickel M. Ajayan, Subhamoy Ghatak, Vidya Kochat, Chandra Sekhar Tiwary, Arindam Ghosh, Yongji Gong, Sanjeev Kaushal, Kimberly Hsieh, Xiang Zhang
Publikováno v:
MRS Advances. 3:299-305
The mechanism of electrical noise in transition metal dichalcogenides (TMDCs) has mostly been attributed to charge carrier fluctuations between the oxide traps and the conducting channel, in accordance with the McWhorter model. However, the original
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981d3a9b82d4d6dd0e8b4345c9ebdccf
https://doi.org/10.1557/adv.2018.63
https://doi.org/10.1557/adv.2018.63
Publikováno v:
Nano letters. 18(8)
One-dimensional Majorana modes are predicated to form in Josephson junctions based on three-dimensional topological insulators (TIs). While observations of supercurrents in Josephson junctions made on bulk-insulating TI samples have been reported rec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1ab4024a612107dd83e19bdba759b125
https://pubmed.ncbi.nlm.nih.gov/30028140
https://pubmed.ncbi.nlm.nih.gov/30028140
Autor:
Yuichiro Ando, Kazuhiko Matsumoto, Kouji Segawa, Fan Yang, Achim Rosch, Yasushi Kanai, A. A. Taskin, Subhamoy Ghatak, Yoichi Ando, Masashi Shiraishi
Publikováno v:
Proceedings of the Nano-Micro Conference 2017.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::898fde553d0144117a7f7c7988d70bd8
https://doi.org/10.11605/cp.nmc2017.01069
https://doi.org/10.11605/cp.nmc2017.01069
Autor:
Yoichi Ando, Fan Yang, Achim Rosch, Subhamoy Ghatak, Kazuhiko Matsumoto, Kouji Segawa, Yuichiro Ando, A. A. Taskin, Yasushi Kanai, Masashi Shiraishi
Publikováno v:
Physical Review B. 94
The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to give rise to only one type of spin polarization for a given current di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::787532624a35c37565f706673f3f68fb
https://doi.org/10.1103/physrevb.94.075304
https://doi.org/10.1103/physrevb.94.075304
Publikováno v:
Nanotechnology. 27:125706
We have addressed the microscopic transport mechanism at the switching or `on-off' transition in transition metal dichalcogenide (TMDC) field-effect transistors (FETs), which has been a controversial topic in TMDC electronics, especially at room temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1aa4c71016c78159e3377028d1f3a198
https://doi.org/10.1088/0957-4484/27/12/125706
https://doi.org/10.1088/0957-4484/27/12/125706
Publikováno v:
IndraStra Global.
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c149bd371150cec4a993dd36ebe93e12
http://eprints.iisc.ac.in/42289/1/Nature_of_Electronic.pdf
http://eprints.iisc.ac.in/42289/1/Nature_of_Electronic.pdf