Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Subba Ramaiah Kodigala"'
Autor:
Hiral N Patel, Ian Carroll, Rodolfo Lopez, Sandeep Sankararaman, Charles Etienne, Subba Ramaiah Kodigala, Mark R Paul, Henk W Ch Postma
Publikováno v:
PLoS ONE, Vol 12, Iss 2, p e0171505 (2017)
We study how double-stranded DNA translocates through graphene nanogaps. Nanogaps are fabricated with a novel capillary-force induced graphene nanogap formation technique. DNA translocation signatures for nanogaps are qualitatively different from tho
Externí odkaz:
https://doaj.org/article/7b110db707bc446b88dd68eff838b3fe
Publikováno v:
In Applied Surface Science 2006 253(3):1451-1458
Autor:
Subba Ramaiah Kodigala
Publikováno v:
Physica B: Condensed Matter. 500:35-43
This article emphasizes verification of Fowler–Nordheim electron tunneling mechanism in the Ni/SiO 2 / n -4H SiC MOS devices by developing three different kinds of models. The standard semiconductor equations are categorically solved to obtain the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e86fd8037bfd43784e3f208e8e48203
https://doi.org/10.1016/j.physb.2016.07.013
https://doi.org/10.1016/j.physb.2016.07.013
Autor:
Subba Ramaiah Kodigala
Publikováno v:
Journal of Alloys and Compounds. 674:435-446
This article presents theoretical and experimental results of n-type GaN semiconductor. In the first part, the variation of surface potential of GaN with varying carrier concentration in the range from 1015 to 1019 cm−3 is determined as well as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5325a5e9e8b8cfd78136d5488989ad34
https://doi.org/10.1016/j.jallcom.2016.03.007
https://doi.org/10.1016/j.jallcom.2016.03.007
Autor:
Sandeep Sankararaman, Ian M. Carroll, Mark Paul, Hiral Patel, Rodolfo Lopez, Charles Etienne, Subba Ramaiah Kodigala, Henk W. Ch. Postma
Publikováno v:
PLoS ONE, Vol 12, Iss 2, p e0171505 (2017)
PLoS ONE
PLoS ONE
We study how double-stranded DNA translocates through graphene nanogaps. Nanogaps are fabricated with a novel capillary-force induced graphene nanogap formation technique. DNA translocation signatures for nanogaps are qualitatively different from tho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a8de6e220b5cc82e43c42d19b2fd97b
http://arxiv.org/abs/1802.07657
http://arxiv.org/abs/1802.07657
Publikováno v:
Solid-State Electronics. 114:104-110
The Ni/SiO2/n-type 4H SiC MOS devices have been fabricated for microelectronic device applications. The SiO2 layer employed in the MOS devices is grown by wet thermal oxidation process. The current–field characteristics of Ni/SiO2/n-type 4H SiC MOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::194cd5599860845d19fa9f9fa5687370
https://doi.org/10.1016/j.sse.2015.08.017
https://doi.org/10.1016/j.sse.2015.08.017
Autor:
D. Johnstone, B.J. Gordon, Dhruvajyoti Roy, Subba Ramaiah Kodigala, C.B. Overton, Ira Ardoin, Somnath Chattopadhyay, D. Barone
Publikováno v:
Applied Surface Science. 330:465-475
The SiO2 layers have been grown onto C-face and Si-face 4H-SiC substrates by two different techniques such as wet thermal oxidize process and sputtering. The deposition recipes of these techniques are carefully optimized by trails and error method. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58a0a29b60928b362701f414678c6ed7
https://doi.org/10.1016/j.apsusc.2014.12.116
https://doi.org/10.1016/j.apsusc.2014.12.116
Publikováno v:
In Materials Chemistry and Physics 2001 68(1):22-30
Autor:
Subba Ramaiah Kodigala
The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell ot
Publikováno v:
Materials Science and Engineering: B. 129:22-30
We have systematically carried out investigations on the growth of SiC epitaxial layers by varying C/Si ratio over the range of 0.5, 1.0, 3.0, 6.0, and 9.0 in the gas phase. The studies by an optical Nomarski microscope and an atomic force microscope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c2dd1222a042eeac888e6ccc568039e
https://doi.org/10.1016/j.mseb.2005.12.010
https://doi.org/10.1016/j.mseb.2005.12.010