Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Subash Krishnankutty"'
Autor:
J.D. Brown, J.D. Benson, J. Boney, Thomas E. Nohava, K.V. Dang, Subash Krishnankutty, W. Yang, S. Harney, J. F. Schetzina, J. Matthews
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:35-41
Visible-blind UV cameras based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes have been successfully demonstrated. The photodiode arrays were hybridized to silicon readout integrated circuits (ROICs) using In bump bonds. Outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c74a61a0d38a3ffcad733784876f6385
https://doi.org/10.1557/s1092578300004051
https://doi.org/10.1557/s1092578300004051
Autor:
Robert C. Torreano, Scott A. McPherson, Holly A. Marsh, W. Yang, Subash Krishnankutty, Thomas Nohova
Publikováno v:
Applied Physics Letters. 73:1086-1088
Back-illuminated GaN/AlGaN ultraviolet (UV) heterojunction photodiodes with high quantum efficiencies are demonstrated. Photovoltaic (zero bias) responsivity of 0.2 A/W at 355 nm was achieved. The improved efficiencies primarily arise from the use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a372a28708c770f8a4b37494f21824c
https://doi.org/10.1063/1.122092
https://doi.org/10.1063/1.122092
Autor:
Holly A. Marsh, Thomas E. Nohava, W. Yang, Robert C. Torreano, Subash Krishnankutty, Scott A. McPherson
Publikováno v:
Applied Physics Letters. 73:978-980
A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 10 5 . From 360 nm to 400
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f57c906fbd56c6a898a3971973b8e409
https://doi.org/10.1063/1.122058
https://doi.org/10.1063/1.122058
Autor:
J.D. Brown, J. F. Schetzina, Subash Krishnankutty, J. Matthews, Thomas E. Nohava, P. Srinivasan, W. Yang, J. Boney
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5
An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a73636d3baed5bda8a9e7cde50405e2c
https://doi.org/10.1557/s1092578300000065
https://doi.org/10.1557/s1092578300000065
Autor:
J. Matthews, J.D. Brown, J. F. Schetzina, J. Boney, Z. Yu, C. Terrill, W. Yang, Subash Krishnankutty, Thomas E. Nohava, K.W. Dang, J.D. Benson, S. Harney
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4
A visible-blind UV camera based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::744259ab42665d66e291a6fd6f3f77ed
https://doi.org/10.1557/s109257830000065x
https://doi.org/10.1557/s109257830000065x
Autor:
Scott A. McPherson, Thomas E. Nohava, Robert C. Torreano, Holly A. Marsh, Subash Krishnankutty, W. Yang
Publikováno v:
SPIE Proceedings.
Using MOCVD grown GaN and AlGaN alloys and heterostructures, we realized heterojunction UV photodiodes and phototransistors. We achieved photovoltaic internal quantum efficiency in excess of 90 percent and large UV-visible rejection ratio in the GaN/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4e3df94a22baecb6d0f0cc3e94dcadc
https://doi.org/10.1117/12.304481
https://doi.org/10.1117/12.304481
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 3
Results from MOCVD grown n-Al0.1Ga0.9N/i-GaN/p-GaN UV photodetectors on sapphire substrates are presented. The devices show peak responsivities near 0.2A/W for wavelengths between 352nm and 362nm, and responsivities of less than 10-3A/W for wavelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cab985cc791cf5190c6eeb9e984b544a
https://doi.org/10.1557/s109257830000079x
https://doi.org/10.1557/s109257830000079x
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.