Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Subaek Lee"'
Publikováno v:
Materials, Vol 16, Iss 20, p 6698 (2023)
The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride
Externí odkaz:
https://doaj.org/article/e854ca03871b41998c139efcf04780d7
Publikováno v:
Materials, Vol 16, Iss 18, p 6184 (2023)
The bipolar resistive switching properties of Pt/TaOx/InOx/ITO-resistive random-access memory devices under DC and pulse measurement conditions are explored in this work. Transmission electron microscopy and X-ray photoelectron spectroscopy were used
Externí odkaz:
https://doaj.org/article/1912b5539aac450e9559801cfd6e63e5