Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Sub-threshold Inversion"'
Autor:
Jeong, Jihoon
The FCC allocated the spectrum of 402-405 MHz for MICS (Medical Implant Communication Services) applications in 1999. The regulations for MICS band apply to devices that support the diagnostic and/or therapeutic functions associated with implanted me
Externí odkaz:
http://hdl.handle.net/10919/31152
http://scholar.lib.vt.edu/theses/available/etd-02062012-151323/
http://scholar.lib.vt.edu/theses/available/etd-02062012-151323/
Autor:
Worapishet, A., Khumsat, P.
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 3/29/2007, Vol. 43 Issue 7, p390-391, 2p, 1 Diagram, 2 Graphs
Autor:
Sarangam, K., Samad, Hameed Zohaib
Publikováno v:
Information & Communication Technologies; 2010, p417-422, 6p
Autor:
Dokic, Branko, Pajkanovic, Aleksandar
Publikováno v:
2013 36th International Convention on Information & Communication Technology, Electronics & Microelectronics (MIPRO); 2013, p60-65, 6p
Publikováno v:
International Symposium on Signals, Circuits & Systems. Proceedings, SCS 2003. (Cat. No.03EX720); 2004, p45-50, 6p
Publikováno v:
Digest. International Electron Devices Meeting; 2002, p113-116, 4p
Publikováno v:
IEEE Transactions on Electron Devices; Aug2010, Vol. 57 Issue 8, p1743-1750, 8p
Publikováno v:
Molecular Simulation; Jan2008, Vol. 34 Issue 1, p63-72, 10p, 1 Black and White Photograph, 11 Graphs
Autor:
Hameed Zohaib Samad, K. Sarangam
Publikováno v:
Information and Communication Technologies ISBN: 9783642157653
ICT
ICT
Designing analog circuit to operate at low voltage levels for applications like battery powered analog and mixed mode electronic device is the need of the day. MOS devices are required to be used in the weak inversion region or the sub-threshold inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99dcc2911f24609b057f6dfb432edcc1
https://doi.org/10.1007/978-3-642-15766-0_66
https://doi.org/10.1007/978-3-642-15766-0_66
Autor:
Isabelle Ferain, J. Caro, Serge Biesemans, Nadine Collaert, G. P. Lansbergen, Malgorzata Jurczak, Hermann Sellier, Sven Rogge
Publikováno v:
2006 International Conference on Nanoscience and Nanotechnology.
The authors experimentally investigate the microscopic transport characteristics of triple-gated field-effect transistors fabricated in silicon. FinFETs are three dimensional nano-scale devices consisting of a lithographically defined Si nanowire sur