Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Su-Zhien Chen"'
Autor:
Su Zhien Chen, Shih Wei Chiu, Wang Ting Chiu, Hsiang Chen, Chan-Yu Lin, Yang Luo, Chyuan Haur Kao, I Chien Chen
Publikováno v:
Applied Surface Science. 396:1673-1677
In this research, a CeO 2 film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce 2 Ti 2 O 7 trapping laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aac9a6179fecf0dd1721391843d34d1
https://doi.org/10.1016/j.apsusc.2016.12.008
https://doi.org/10.1016/j.apsusc.2016.12.008
Autor:
Shang-Ren Lin, Chian You Chen, Hsiang Chen, Chyuan Haur Kao, Yun-Yang He, Kun-Min Hsieh, Min-Han Lin, Sheng-Hao Hung, Su Zhien Chen
Publikováno v:
Vacuum. 118:69-73
In this study, CeO2 was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. This trapping layer underwent annealing to enhance memory performance. Multiple material analyses indicate that annealing enables enhanced cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f48543cd4a34848cbb779dc1d6e600a
https://doi.org/10.1016/j.vacuum.2015.01.024
https://doi.org/10.1016/j.vacuum.2015.01.024
Publikováno v:
Applied Surface Science. 320:379-382
In this research, we used MoO3 with CF4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b97c8105a6dfe46d8d31b9eeabcaeb0
https://doi.org/10.1016/j.apsusc.2014.09.051
https://doi.org/10.1016/j.apsusc.2014.09.051
Publikováno v:
Thin Solid Films. 570:564-567
In this study, high-K MoTiO 5 dielectrics were applied as charge trapping layers in fabricated metal-oxide-high-K MoTiO 5 -oxide-Si-type memory devices. Among the applied MoTiO 5 trapping layer treatment conditions, annealing at 900 °C yielded devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ec32c8ace4de1da045fb0ef11b3e1c
https://doi.org/10.1016/j.tsf.2014.02.032
https://doi.org/10.1016/j.tsf.2014.02.032