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Autor:
Ja-Chun Ku, Jin-Woong Kim, Si-Bum Kim, Jeong-Ho Kim, Choon-Kun Ryu, Su-Youb Lee, Jeong-Mo Hwang, Jae-Seon Yu, Su-Jin Oh, Inazawa Kouichiro
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1401-1410
We intentionally introduced excessive Si during the SiOxNy film deposition in order to increase the etch selectivity-to-SiOxNy for advanced self-aligned contact (SAC) etching in sub-0.25 μm ultralarge scale integration devices. The SiOxNy layer was