Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Su-Ching Chiu"'
Autor:
Su-Ching Chiu, 邱素卿
104
Since the Financial Supervisory Commission actively promotes the "Bank 3.0" and banks want to use the Internet to find customers who could not be reached in the past. As more and more banks devote their efforts to the digital banking, this m
Since the Financial Supervisory Commission actively promotes the "Bank 3.0" and banks want to use the Internet to find customers who could not be reached in the past. As more and more banks devote their efforts to the digital banking, this m
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13440647310410934651
Autor:
Su-Ching Chiu, 邱素卿
101
In general, the missions and goals of Taiwan’s small-medium sized enterprises are to pursue continuous growth momentum, to maintain long-term competitive advantages, and to quest global market opportunities. Over the past three decades, Ta
In general, the missions and goals of Taiwan’s small-medium sized enterprises are to pursue continuous growth momentum, to maintain long-term competitive advantages, and to quest global market opportunities. Over the past three decades, Ta
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/98179594913011819814
Autor:
Kai Wei Zhuang, Zheng Ying Wang, Cheng Hsiung Peng, Pang-Shiu Chen, Su Ching Chiu, Tzu Wei Lin, Sheng Wei Lee
Publikováno v:
Ceramics International. 43:308-315
In this study, amorphous MoO x films and Ag metal films were deposited on soda-lime glass via a sputtering system at room temperature. The experimental results indicate that MoO x films prepared with a 6% O 2 /Ar flow rate exhibit an amorphous phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc074a2210eb3dc6a5e5da658ff8353f
https://doi.org/10.1016/j.ceramint.2016.09.157
https://doi.org/10.1016/j.ceramint.2016.09.157
Autor:
Chun-Che Lou, Ming-Jui Yang, Yi-Hsien Lu, Chao-Hsin Chien, Guang-Li Luo, Su-Ching Chiu, Tiao-Yuan Huang
Publikováno v:
IEEE Electron Device Letters. 28:902-904
In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium- silicate (HfSiOx) gate dielectric are demonstrated with low- temperature processing. Because of the higher gate-capacitance density, TFTs w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76ecc69b526049e79003aabca8e45a7c
https://doi.org/10.1109/led.2007.904901
https://doi.org/10.1109/led.2007.904901
Autor:
Ming-Jui Yang, Chao-Hsin Chien, Yi-Hsien Lu, Guang-Li Luo, Su-Ching Chiu, Chun-Che Lou, Tiao-Yuan Huang
Publikováno v:
IEEE Electron Device Letters; Oct2007, Vol. 28 Issue 10, p902-904, 3p, 2 Charts, 3 Graphs