Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Su Keun Eom"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 908-913 (2019)
In this work, we report high-performance InGaAs quantum-well MOSFETs with optimized bi-layer high-k gate dielectrics incorporating high-quality plasma-assisted atomic -layer-deposited (PA-ALD) HfOxNy interfacial layer (IL). With more than 1 nm IL dep
Externí odkaz:
https://doaj.org/article/1b17cb81520249888a5fb22e0cd600fb
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 908-913 (2019)
In this work, we report high-performance InGaAs quantum-well MOSFETs with optimized bi-layer high-k gate dielectrics incorporating high-quality plasma-assisted atomic -layer-deposited (PA-ALD) HfOxNy interfacial layer (IL). With more than 1 nm IL dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beb5a61bded58296d48824ed2087dcb3
https://ieeexplore.ieee.org/document/8796336/
https://ieeexplore.ieee.org/document/8796336/
The scope of this chapter is to introduce a highly efficient HfO2 atomic layer deposition (ALD) process with superior interface defect characteristics that can be applied on high-mobility III-V substrates. For a long time, the major academic research
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b94e4d284d0b7fb22882c084011eb80
https://doi.org/10.5772/intechopen.92424
https://doi.org/10.5772/intechopen.92424
Publikováno v:
Results in Physics, Vol 16, Iss, Pp 102950-(2020)
We demonstrated gallium nitride (GaN) based negative capacitance field-effect transistors (NCFETs) that achieve steep switching operation. Ferroelectric phase characteristics were successfully demonstrated using a 10 nm thick undoped-HfO2 ferroelectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::869cbee4a25675cbc10bdec62d5b098b
http://www.sciencedirect.com/science/article/pii/S2211379719336241
http://www.sciencedirect.com/science/article/pii/S2211379719336241
Publikováno v:
IEEE Electron Device Letters. 39:1636-1639
This letter reports high-quality plasma-assisted atomic-layer-deposited HfO x N y by using isopropyl alcohol (IPA) oxidant and cyclic N2 plasma treatment demonstrated on n-type In0.53Ga0.47As. Improved interface characteristics, with suppressed frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8cb41327b3eed04f07a106e25dcb530
https://doi.org/10.1109/led.2018.2870176
https://doi.org/10.1109/led.2018.2870176
Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide
Publikováno v:
Vacuum. 155:428-433
This paper reports the first-time evaluation of the time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with plasma enhanced chemical vapor deposition (PECVD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c146004be31543e9a8a606f0ae4c7a77
https://doi.org/10.1016/j.vacuum.2018.06.043
https://doi.org/10.1016/j.vacuum.2018.06.043
Publikováno v:
IEEE Electron Device Letters. 39:995-998
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal–insulator–semiconductor (MIS) s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24f6de9e374135235bf6f2b7e3a4ba44
https://doi.org/10.1109/led.2018.2834223
https://doi.org/10.1109/led.2018.2834223
Autor:
Su-Keun Eom, Kwang-k Seo, Sang-Woo Han, Hyun-Seop Kim, Won-Ho Jang, Ho-Young Cha, Chun-Hyung Cho, Hyungtak Kim
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 18:187-192
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89c2f8155b29f3601e22fedfa886680c
https://doi.org/10.5573/jsts.2018.18.2.187
https://doi.org/10.5573/jsts.2018.18.2.187
Autor:
Jae-Gil Lee, Kwang-Seok Seo, Dong-Hwan Kim, Hyun-Seop Kim, Hyungtak Kim, Seung-Hyun Roh, Su-Keun Eom, Young-Chul Byun, Ho-Young Cha
Publikováno v:
Journal of the Korean Physical Society. 72:166-170
The effects of post-metallization annealing (PMA) have been investigated for thermally-grown SiO2 on 4H-SiC metal-oxide-semiconductor (MOS) with a molybdenum (Mo) gate electrode. Mo is a great metal gate material for Silicon carbide (SiC) due to its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::665ae0b038c5a094cb41d5ca94abe299
https://doi.org/10.3938/jkps.72.166
https://doi.org/10.3938/jkps.72.166
Publikováno v:
Journal of the Korean Physical Society. 71:711-716
Oscillatory dependence of tunneling conductance on the barrier thickness is investigated theoretically for the metal/insulator/metal junctions. The tunneling transmission is expressed with the reflection and the transmission amplitudes of each separa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1e244f6070f3d82dc75950a05873a24
https://doi.org/10.3938/jkps.71.711
https://doi.org/10.3938/jkps.71.711