Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Su Hun Choi"'
Autor:
Hee Soo Kim, Su Hun Choi
Publikováno v:
Journal of Korea Technology Innovation Society. 23:967-991
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c1a5f420eadc8949835dc525e33400
https://doi.org/10.35978/jktis.2020.10.23.5.967
https://doi.org/10.35978/jktis.2020.10.23.5.967
Autor:
Myung Hyun Lee, Jeong Min Choi, Won-Jae Lee, Su Hun Choi, Young Gon Kim, Chae Young Lee, Yeon Suk Jang, Seong-Min Jeong, Mi Seon Park, Yun Ji Shin
Publikováno v:
Materials Science Forum. 924:47-50
The modified crucible in the top seeded solution growth (TSSG) method was proposed to get the stable growth condition and the enhanced growth rate. The temperature gradient and the distribution of dissolved carbon in the solvent were obtained by nume
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f836fae7c79f2bdb035cacaae8fc528a
https://doi.org/10.4028/www.scientific.net/msf.924.47
https://doi.org/10.4028/www.scientific.net/msf.924.47
Autor:
Mi Seon Park, Yun Ji Shin, Yeon Suk Jang, Seong-Min Jeong, Won-Jae Lee, Jeong Min Choi, Myung Hyun Lee, Chae Young Lee, Su Hun Choi, Young Gon Kim
Publikováno v:
Materials Science Forum. 924:27-30
The crucible design having a stepped wall was introduced for increasing the growth rate of SiC crystal without metal addition in top-seeded solution growth (TSSG) method. The numerical simulation confirmed that new crucible design to increase the sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca3115ee4340409a1a8b35e15598692f
https://doi.org/10.4028/www.scientific.net/msf.924.27
https://doi.org/10.4028/www.scientific.net/msf.924.27
Autor:
Myung Ok Kyun, Young Gon Kim, Su Hun Choi, Kap Ryeol Ku, Park Jong Hwi, Jung-Woo Choi, Jung Gyu Kim, Jung Doo Seo, Won-Jae Lee
Publikováno v:
Materials Science Forum. 924:23-26
6H-SiC single crystal was grown with simple modification in PVT process to investigate the aspect of resistivity change in crystal. The modified process consisted of a new initial step to get rid of impurities in the growth cell before the main growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ebed3b1ce9073df42b19ac0862bc390
https://doi.org/10.4028/www.scientific.net/msf.924.23
https://doi.org/10.4028/www.scientific.net/msf.924.23
Autor:
Yun-Ji Shin, Dae-Seop Byeon, Yeong-Jae Yu, Su-Hun Choi, Won-Jae Lee, Seong-Min Jeong, Myung-Hyun Lee
Publikováno v:
CrystEngComm. 19:6731-6735
The top-seeded solution growth (TSSG) method is an alternative technique for growing SiC which can reduce the defect levels in the crystal. With TSSG, the SiC crystal is grown on a SiC seed crystal attached to a seed shaft. The seed shaft is typicall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::795d4afa13c45583d9bbe7707d57e29a
https://doi.org/10.1039/c7ce01641g
https://doi.org/10.1039/c7ce01641g
Autor:
Yeon-Suk Jang, Hwang-Ju Kim, Dong-Hun Lee, Yi-Sik Choi, Kwang-Hee Jung, Su-Hun Choi, Mi-Seon Park, Young-Gon Kim, Tae Hee Kim, Won-Jae Lee
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 26:215-219
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08e683d9e47d4b0a1ec8cabc3ee118c4
https://doi.org/10.6111/jkcgct.2016.26.6.215
https://doi.org/10.6111/jkcgct.2016.26.6.215