Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Su Fen Cui"'
Publikováno v:
Insects, Vol 14, Iss 1, p 27 (2022)
Capsaicin is a capsaicinoid in hot chili peppers, with excellent antibacterial and antimicrobial activities and a good safety profile, but its poor solubility and instability restrict its effectiveness. This limitation may be mitigated by encapsulati
Externí odkaz:
https://doaj.org/article/a926c3e5d02045e1abef286967dee1e5
Publikováno v:
Journal of Stored Products Research. 83:322-330
Insects that are pests of stored products are highly tolerant to low O2 levels (hypoxia) and high carbon dioxide levels (hypercapnia) for long periods, but the underlying mechanism remains unclear. In the present study, we investigated the metabolic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd8deaff37256334b6d6a46bde3c8d76
https://doi.org/10.1016/j.jspr.2019.06.002
https://doi.org/10.1016/j.jspr.2019.06.002
Publikováno v:
IEEE Transactions on Electron Devices. 63:4352-4358
In this paper, we propose an analytical model for the variable drift region width (VDRW) silicon-on-insulator lateral double-diffused MOS (SOI LDMOS) device. Using the proposed model, for example, the breakdown voltage 375 V of VDRW SOI LDMOS is obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a92d4a960ac629fe320315d186ed975
https://doi.org/10.1109/ted.2016.2607423
https://doi.org/10.1109/ted.2016.2607423
Publikováno v:
Solid-State Electronics. 116:65-69
In this work, the preliminary study and a design method for the VLW (Variation of Lateral Width) SOI LDMOS device have been proposed. A capacitance-based analytical model and the adjusted critical electric model have been presented for this special s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dde73639b3a9d94ee7c9d3b23c51814
https://doi.org/10.1016/j.sse.2015.11.039
https://doi.org/10.1016/j.sse.2015.11.039
Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation
Publikováno v:
Journal of Semiconductors. 39:114007
The main content revolves round the on-state characteristics of the variation of a lateral width (VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific on-resistance of the VLW LDMOS device, the simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3d071c5285dab283be1b707084d0a9
https://doi.org/10.1088/1674-4926/39/11/114007
https://doi.org/10.1088/1674-4926/39/11/114007