Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Su, Haitian"'
Autor:
Luo, Yi, Liu, Xiao-Fei, Liu, Zhi-Hai, Li, Weijie, Yan, Shili, Gao, Han, Su, Haitian, Pan, Dong, Zhao, Jianhua, Wang, Ji-Yin, Xu, H. Q.
We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array and correspo
Externí odkaz:
http://arxiv.org/abs/2407.15534
Autor:
Gao, Han, Kong, Zhen-Zhen, Zhang, Po, Luo, Yi, Su, Haitian, Liu, Xiao-Fei, Wang, Gui-Lei, Wang, Ji-Yin, Xu, H. Q.
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$. Bias-spectroscopy
Externí odkaz:
http://arxiv.org/abs/2405.03107
Autor:
Wu, Xingjun, Su, Haitian, Zeng, Chuanchang, Wang, Ji-Yin, Yan, Shili, Pan, Dong, Zhao, Jianhua, Zhang, Po, Xu, H. Q.
The absence of odd-order Shapiro steps is one of the predicted signatures for topological superconductors. Experimentally, the missing first-order Shapiro step has been reported in several superconducting systems presumably to be topologically non-tr
Externí odkaz:
http://arxiv.org/abs/2403.07370
Autor:
Su, Haitian, Wang, Ji-Yin, Gao, Han, Luo, Yi, Yan, Shili, Wu, Xingjun, Li, Guoan, Shen, Jie, Lu, Li, Pan, Dong, Zhao, Jianhua, Zhang, Po, Xu, H. Q.
Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect". Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductiv
Externí odkaz:
http://arxiv.org/abs/2402.02137
Autor:
Yan, Shili, Su, Haitian, Pan, Dong, Li, Weijie, Lyu, Zhaozheng, Chen, Mo, Wu, Xingjun, Lu, Li, Zhao, Jianhua, Wang, Ji-Yin, Xu, H. Q.
High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit couplings, lar
Externí odkaz:
http://arxiv.org/abs/2304.10287
Publikováno v:
Appl. Phys. Lett. 120, 233102 (2022)
A thin, narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO$_2$ substrate and studied at low temperatures. Gate transfer characteristic meas
Externí odkaz:
http://arxiv.org/abs/2208.09361
Publikováno v:
Applied Physics Letters; 6/6/2022, Vol. 120 Issue 23, p1-6, 6p
Autor:
Su H; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China.; Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China., Wang JY; Beijing Academy of Quantum Information Sciences, Beijing 100193, China., Gao H; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China., Luo Y; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China.; Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China., Yan S; Beijing Academy of Quantum Information Sciences, Beijing 100193, China., Wu X; Beijing Academy of Quantum Information Sciences, Beijing 100193, China., Li G; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China., Shen J; Beijing Academy of Quantum Information Sciences, Beijing 100193, China.; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.; Songshan Lake Materials Laboratory, Dongguan 523808, China., Lu L; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.; Songshan Lake Materials Laboratory, Dongguan 523808, China., Pan D; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China., Zhao J; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China., Zhang P; Beijing Academy of Quantum Information Sciences, Beijing 100193, China., Xu HQ; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China.; Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
Publikováno v:
Physical review letters [Phys Rev Lett] 2024 Aug 23; Vol. 133 (8), pp. 087001.
Autor:
Gao H; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China. hqxu@pku.edu.cn., Kong ZZ; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. Guilei.Wang@bjsamt.org.cn., Zhang P; Beijing Academy of Quantum Information Sciences, Beijing 100193, China. wang_jy@baqis.ac.cn., Luo Y; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China. hqxu@pku.edu.cn.; Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China., Su H; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China. hqxu@pku.edu.cn.; Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China., Liu XF; Beijing Academy of Quantum Information Sciences, Beijing 100193, China. wang_jy@baqis.ac.cn., Wang GL; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. Guilei.Wang@bjsamt.org.cn.; Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China.; Beijing Superstring Academy of Memory Technology, Beijing 100176, China., Wang JY; Beijing Academy of Quantum Information Sciences, Beijing 100193, China. wang_jy@baqis.ac.cn., Xu HQ; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China. hqxu@pku.edu.cn.; Beijing Academy of Quantum Information Sciences, Beijing 100193, China. wang_jy@baqis.ac.cn.
Publikováno v:
Nanoscale [Nanoscale] 2024 May 30; Vol. 16 (21), pp. 10333-10339. Date of Electronic Publication: 2024 May 30.