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Large effective mass and ultralow thermal conductivity lead to high thermoelectric performance in the high-entropy semiconductor MnGeAgBiTe4.

Autor: Tang, Yuxia, Shu, Wenjie, Su, Bingwen, Hong, Aijun, Zhai, Wenjing, Li, Juan, Zhou, Guanzhong, Lin, Lin, Zhou, Xiaohui, Yan, Zhibo, Zhang, Qian, Liu, Jun-Ming

Publikováno v: Journal of Materials Chemistry A; 3/7/2024, Vol. 12 Issue 9, p5464-5473, 10p

Enhanced Thermoelectric Performance of p-type AgSbTe 2 via Cu Doping.

Autor: Shu W; National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China., Tang Y; National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China., Su B; National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China., Hong A; School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, China., Lin L; Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, China., Zhou X; National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China., Yan Z; National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China., Liu JM; National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Oct 09; Vol. 16 (40), pp. 54105-54114. Date of Electronic Publication: 2024 Sep 27.