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pro vyhledávání: '"Stuyck, N. I. Dumoulin"'
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients onto the qu
Externí odkaz:
http://arxiv.org/abs/2108.10769
Autor:
Stuyck, N. I. Dumoulin, Li, R., Godfrin, C., Elsayed, A., Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Shehata, M., Simion, G., Canvel, Y., Goux, L., Heyns, M., Govoreanu, B., Radu, I. P.
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by
Externí odkaz:
http://arxiv.org/abs/2108.11317
Autor:
Li, R., Stuyck, N. I. Dumoulin, Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Elsayed, A., Shehata, M., Simion, G., Godfrin, C., Canvel, Y., Ivanov, Ts., Goux, L., Govoreanu, B., Radu, I. P.
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM 2020), 38.3.1-38.3.4
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a
Externí odkaz:
http://arxiv.org/abs/2102.03929