Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Sture Petersson"'
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2005 546(1):312-318
Autor:
Angela Kok, Stanislav Pospisil, Tomas Trojek, Tomas Urban, Dirk Meier, Peter Rubovič, Jiri Hulka, Tomas Slavicek, Ozhan Koybasi, Zdenek Kohout, Thor-Erik Hansen, Petr Masek, Pavel Zlebcik, Sture Petersson
Publikováno v:
2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD).
A demonstrator of the portable position sensitive neutron detecting device for neutron imaging in a mixed radiation field is presented. A detector of the device is based on multilayer perpendicularly crossed strip sensors interlaced with neutron conv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7ae16dcda1ac146edab3edb295c99c
https://doi.org/10.1109/nssmic.2016.8069946
https://doi.org/10.1109/nssmic.2016.8069946
Autor:
Jan Jakubek, Sture Petersson, Josef Uher, Vladimír Linhart, Christer Fröjdh, Sherwood Parker, Stanislav Pospisil, Z. Kohout, Christopher J. Kenney, Göran Thungström
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 576:32-37
Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an app ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22774a0ff4cfae5636a19a5aa7b11bcf
https://doi.org/10.1016/j.nima.2007.01.115
https://doi.org/10.1016/j.nima.2007.01.115
Publikováno v:
Journal of Applied Physics; 7/15/1996, Vol. 80 Issue 2, p952, 10p, 2 Black and White Photographs, 1 Chart, 9 Graphs
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 546:312-318
Ultra-thin Δ E detectors for spectroscopic applications have been fabricated and characterized down to a thickness of 4.5 μm. A common one-side mask aligner was used to fabricate the detectors. The detectors display low leakage current and the resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d12bff64b15acc4d43e25e66ef7b31
https://doi.org/10.1016/j.nima.2005.03.053
https://doi.org/10.1016/j.nima.2005.03.053
Publikováno v:
Materials Science and Engineering: B. :29-33
Electrochemical etching of n-type silicon in hydrofluoric acid electrolyte is now well known as a technique for micro- or macroporous silicon formation. It is commonly admitted that the width of pores can extend over four orders of magnitude, from 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f938b0c1a61a01ecc148c248e8cf5077
https://doi.org/10.1016/s0921-5107(99)00260-3
https://doi.org/10.1016/s0921-5107(99)00260-3
Autor:
Ulf Sannemo, Christer Fröjdh, C. Sture Petersson, Mats Hjelm, Clas Persson, Hans-Erik Nilsson
Publikováno v:
Journal of Applied Physics. 86:965-973
A study of electron transport in 6H-SiC is presented using a full band Monte Carlo simulation model. The Monte Carlo model uses four conduction bands obtained from a full potential band structure calculation based on the local density approximation t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51a77b1750727bed4df1ffe81918a371
https://doi.org/10.1063/1.370833
https://doi.org/10.1063/1.370833
Publikováno v:
Solid-State Electronics. 42:297-305
A numerical study of the blocking characteristics of the Permeable Base Transistor (PBT) is presented. The PBT is regarded as a promising transistor structure for high voltage and high frequency applications. Numerical studies of the PBT were focused
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccedca24e100505c6f9d8fdf982a72cd
https://doi.org/10.1016/s0038-1101(97)00203-7
https://doi.org/10.1016/s0038-1101(97)00203-7
Autor:
Göran Thungström, Lars Westerberg, C. Sture Petersson, Lars-Olov Norlin, Elbert Jan van Veldhuizen
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 391:315-328
The problem concerning mechanical stability of thin self-supporting ΔE detector in a ΔE-E semiconductor detector telescope, has been solved by integrating both detectors into one unit. We show here a low-cost method to integrate the detectors by wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5304b1bb600e41975cd18070e6805f3c
https://doi.org/10.1016/s0168-9002(97)00408-7
https://doi.org/10.1016/s0168-9002(97)00408-7
Publikováno v:
Journal of Applied Physics. 80:952-961
The electrical and structural properties of epitaxial CoSi2 layers grown on Si by solid‐state interaction between Ti/Co bimetallic layers and Si〈100〉 substrates have been investigated. The Schottky barrier height (SBH) of the CoSi2–Si contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d424987149d5f54bd6be5cf7e8709b87
https://doi.org/10.1063/1.362907
https://doi.org/10.1063/1.362907