Výsledky vyhledávání

Neutron-Induced Effects on a Self-Refresh DRAM

Autor: Manon Letiche, Alberto Bosio, Daniel Soderstrom, Lucas Matana Luza, Helmut Puchner, Ruben Garcia Alia, Luigi Dilillo, Carlo Cazzaniga

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2022, 128, pp.#114406. ⟨10.1016/j.microrel.2021.114406⟩

International audience; The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-ref

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c90d78045df5b34043b806ac465a30ee
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03435635/document

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Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

Autor: Lucas Matana Luza, Arto Javanainen, Wilfrid Farabolini, Antonio Gilardi, Christian Poivey, Luigi Dilillo, Daniel Soderstrom, Heikki Kettunen, Andrea Coronetti

Publikováno v: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (5), pp.716-723. ⟨10.1109/TNS.2021.3068186⟩
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2020)
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2020), Nov 2020, Santa Fe (virtual), United States
IEEE Transactions on Nuclear Science, 2021, 68 (5), pp.716-723. ⟨10.1109/TNS.2021.3068186⟩

This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e4c57ed03fc27531c154016b10f17da
https://doi.org/10.1109/tns.2021.3068186

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Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study

Autor: Carlo Cazzaniga, Eduardo Augusto Bezerra, Maria Kastriotou, Christian Poivey, Lucas Matana Luza, Daniel Soderstrom, Luigi Dilillo, Andre Martins Pio de Mattos

Publikováno v: 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS 2021)
16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS 2021), Jun 2021, Montpellier, France. ⟨10.1109/DTIS53253.2021.9505143⟩
DTIS
DTIS 2021-16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era
DTIS 2021-16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, Jun 2021, Montpellier, France. ⟨10.1109/DTIS53253.2021.9505143⟩
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)

International audience; This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under an a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7f28ed80a486f1971c2376760536693
http://urn.fi/URN:NBN:fi:jyu-202111015465

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Radiation Induced Variable Retention Time in Dynamic Random Access Memories

Autor: Vincent Goiffon, Teddy Bilba, Philippe Paillet, Alexandre Le Roch, Jean-Marc Belloir, Theo Deladerriere, Arnaud Dion, Marc Gaillardin, Guillaume Beaugendre, Antoine Jay, Cedric Virmontois

The effect of gamma-ray and neutron radiations on the Variable Retention Time (VRT) phenomenon occurring in Dynamic Random Access Memory (DRAM) is studied. It is shown that both ionizing radiation and non-ionizing radiation induce VRT behaviors in DR

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::906d1d3481c5a713f419714f08db4642
https://oatao.univ-toulouse.fr/25353/

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Akademický článek

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Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam

Autor: Daniel Soderstrom, Lucas Matana Luza, Alexandre Bosser, Thierry Gil, Kay-Obbe Voss, Heikki Kettunen, Arto Javanainen, Luigi Dilillo

Publikováno v: 30th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2019)
30th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2019), Sep 2019, Montpellier, France

International audience; Stuck and weakened bits in the ISSI 512 Mb SDRAM was investigated in irradiation experiments with a heavy ion microbeam in the GSI facility. Delidded memories were tested in gold and calcium ion beams at 4.8 MeV/u, and stuck b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10396f0e22908e11b866f8ab1084336a
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03359010

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