Zobrazeno 1 - 10
of 194
pro vyhledávání: '"Stuart J. C. Irvine"'
Autor:
Andrew J. Clayton, Cecile M. E. Charbonneau, Wing C. Tsoi, Peter J. Siderfin, Stuart J. C. Irvine
Publikováno v:
Science and Technology of Advanced Materials, Vol 19, Iss 1, Pp 153-159 (2018)
Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin–doped indium oxide (ITO) was used as the substrate, having a similar work function to molybd
Externí odkaz:
https://doaj.org/article/d29d32cc0baf4b4286c17c8001b9836b
Autor:
Shafiul Monir, Giray Kartopu, Vincent Barrioz, Dan Lamb, Stuart J. C. Irvine, Xiaogang Yang, Yuriy Vagapov
Publikováno v:
Applied Sciences, Vol 10, Iss 5, p 1734 (2020)
The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and
Externí odkaz:
https://doaj.org/article/4ee0e0fd193e407386253edad4168b96
Publikováno v:
Materials, Vol 12, Iss 22, p 3706 (2019)
As-doped polycrystalline ZnTe layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated as a back contact for CdTe solar cells. While undoped ZnTe films were essentially insulating, the doped layers showed significant rise
Externí odkaz:
https://doaj.org/article/bc1b4127915b4e3f91f9308ceddeaa05
Autor:
Stuart J C Irvine
This book will provide an authoritative reference on the various aspects of materials science that will impact the next generation of photovoltaic (PV) module technology. The materials emphasis will bring a fresh perspective to the literature and wil
Autor:
Ochai Oklobia, Steve Jones, Giray Kartopu, Dingyuan Lu, Wes Miller, Rajni Mallick, Xiaoping Li, Gang Xiong, Vladislav Kornienko, Ali Abbas, Martin Bliss, John Michael Walls, Stuart J. C. Irvine
In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baaa8cdc5d35faf669b1c8385bc10633
https://nrl.northumbria.ac.uk/id/eprint/49987/1/Impact_of_In-Situ_Cd_Saturation_MOCVD_Grown_CdTe_Solar_Cells_on_As_Doping_and_VOC.pdf
https://nrl.northumbria.ac.uk/id/eprint/49987/1/Impact_of_In-Situ_Cd_Saturation_MOCVD_Grown_CdTe_Solar_Cells_on_As_Doping_and_VOC.pdf
Publikováno v:
Progress in Photovoltaics: Research and Applications. 29:1000-1007
Autor:
Andrew J. Clayton, Ali Abbas, Peter J. Siderfin, Stephen Jones, Ana Teloeken, Ochai Oklobia, John M. Walls, Stuart J. C. Irvine
Publikováno v:
Coatings; Volume 12; Issue 2; Pages: 261
CdTe solar cells were produced using metal organic chemical vapour deposition (MOCVD), which employed a (Zn,Al)S (AZS) high resistant transparent (HRT) layer at the transparent conducting oxide (TCO)/Cd(Zn)S emitter interface, to enable the higher an
Autor:
Stuart J. C. Irvine, Giray Kartopu
Publikováno v:
Metalorganic Vapor Phase Epitaxy (MOVPE)
Autor:
B. Grew, Harrison Ka Hin Lee, Stuart J. C. Irvine, Ali Abbas, John M. Walls, Ochai Oklobia, Giray Kartopu, Deborah L. McGott, Matthew O. Reese, Wing C. Tsoi, S. Jones, P. Siderfin
Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5138adcc96296ad9aa0b0d85308b1105
https://cronfa.swan.ac.uk/Record/cronfa57656/Download/57656__20896__b6490d56647c4c3798b9375870e246f2.pdf
https://cronfa.swan.ac.uk/Record/cronfa57656/Download/57656__20896__b6490d56647c4c3798b9375870e246f2.pdf
Publikováno v:
Energy Science & Engineering, Vol 9, Iss 5, Pp 606-632 (2021)
CdTe is the leading commercial thin film photovoltaic technology with current record laboratory efficiency (22.1%). However, there is much potential for progress toward the Shockley‐Queisser limit (32%). The best CdTe devices have short‐circuit c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e309011b8197785508a2a5f68c1ed437
https://cronfa.swan.ac.uk/Record/cronfa56320/Download/56320__19365__2a3ef105f5b044839a1964f09da8868e.pdf
https://cronfa.swan.ac.uk/Record/cronfa56320/Download/56320__19365__2a3ef105f5b044839a1964f09da8868e.pdf