Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Strukov, D. B."'
Autor:
Bhattacharya, T., Hutchinson, G. H., Pedretti, G., Sheng, X., Ignowski, J., Van Vaerenbergh, T., Beausoleil, R., Strachan, J. P., Strukov, D. B.
Specialized function gradient computing hardware could greatly improve the performance of state-of-the-art optimization algorithms, e.g., based on gradient descent or conjugate gradient methods that are at the core of control, machine learning, and o
Externí odkaz:
http://arxiv.org/abs/2401.16204
The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices and circu
Externí odkaz:
http://arxiv.org/abs/2107.04236
We experimentally demonstrate classification of 4x4 binary images into 4 classes, using a 3-layer mixed-signal neuromorphic network ("MLP perceptron"), based on two passive 20x20 memristive crossbar arrays, board-integrated with discrete CMOS compone
Externí odkaz:
http://arxiv.org/abs/1611.04465
We have fabricated and successfully tested an analog vector-by-matrix multiplier, based on redesigned 10x12 arrays of 55 nm commercial NOR flash memory cells. The modified arrays enable high-precision individual analog tuning of each cell, with sub-1
Externí odkaz:
http://arxiv.org/abs/1611.03379
We have designed, fabricated, and successfully tested a prototype mixed-signal, 28x28-binary-input, 10-output, 3-layer neuromorphic network ("MLP perceptron"). It is based on embedded nonvolatile floating-gate cell arrays redesigned from a commercial
Externí odkaz:
http://arxiv.org/abs/1610.02091
We report on experimental demonstration of a mixed-signal 6-tap finite-impulse response (FIR) filter in which weights are implemented with titanium dioxide memristive devices. In the proposed design weight of a tap is stored with a relatively high pr
Externí odkaz:
http://arxiv.org/abs/1608.05445
Publikováno v:
Proc. ISCAS'15, Lisbon, Portugal, May 2015, pp. 1921-1924
We have modified a commercial NOR flash memory array to enable high-precision tuning of individual floating-gate cells for analog computing applications. The modified array area per cell in a 180 nm process is about 1.5 um^2. While this area is appro
Externí odkaz:
http://arxiv.org/abs/1410.4781
Autor:
Alexandrov, A. S., Bratkovsky, A. M., Bridle, B., Savel'ev, S. E., Strukov, D. B., Williams, R. Stanley
Publikováno v:
Applied Physics Letters 99, 202104 (2011)
We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's Law of Cooli
Externí odkaz:
http://arxiv.org/abs/1108.3120
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Akademický článek
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