Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Strikha, Maksym V."'
Autor:
Morozovska, Anna N., Eliseev, Eugene A., Vysochanskii, Yulian M., Kalinin, Sergei V., Strikha, Maksym V.
Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to
Externí odkaz:
http://arxiv.org/abs/2406.13051
Autor:
Morozovska, Anna N., Strikha, Maksym V., Kelley, Kyle P., Kalinin, Sergei V., Eliseev, Eugene A.
To describe the charge-polarization coupling in the nanostructure formed by a thin Hf$_x$Zr$_{1-x}$O$_2$ film with a single-layer graphene as a top electrode, we develop the "effective" Landau-Ginzburg-Devonshire model. This approach is based on the
Externí odkaz:
http://arxiv.org/abs/2307.01363
Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of diel
Externí odkaz:
http://arxiv.org/abs/2208.13187
We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in the channel. This potential depends on the drain and gate voltages. On t
Externí odkaz:
http://arxiv.org/abs/2105.05310
The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in the channel shows that the electron tunnels through a region significa
Externí odkaz:
http://arxiv.org/abs/2012.11203
Publikováno v:
Low Temperature Physics 46, 211 (2020)
The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that 180-degree dom
Externí odkaz:
http://arxiv.org/abs/2011.13791
Publikováno v:
Phys. Rev. Applied 14, 024081 (2020)
We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention to the impact of electric polarization rotation in a strained multiaxi
Externí odkaz:
http://arxiv.org/abs/2004.05338
Publikováno v:
Phys. Rev. Applied 13, 014040 (2020)
Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and WSe2 monoa
Externí odkaz:
http://arxiv.org/abs/1909.10099
The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum of graphene by inducing an energy gap in it and making it spin-asymmetr
Externí odkaz:
http://arxiv.org/abs/1901.04550
Graphene on ferroelectric structures can be promising candidates for advanced field effect transistors, modulators and electrical transducers, providing that research of their electrotransport and electromechanical performances can be lifted up from
Externí odkaz:
http://arxiv.org/abs/1804.03175