Zobrazeno 1 - 10
of 5 433
pro vyhledávání: '"Strain Engineering"'
Autor:
Xuetian Gong, Chao Zhang, Dong Su, Wenrong Xiao, Fangjie Cen, Ying Yang, Shenglin Jiang, Jing Wang, Kanghua Li, Guangzu Zhang
Publikováno v:
Journal of Materiomics, Vol 10, Iss 6, Pp 1196-1205 (2024)
Dielectric capacitors with high power density and fast charge-discharge speed play an essential role in the development of pulsed power systems. The increased demands for miniaturization and practicality of pulsed power equipment also necessitate the
Externí odkaz:
https://doaj.org/article/d577b94dfbc84241aef50dfc7ed93ee2
Publikováno v:
Nanophotonics, Vol 13, Iss 19, Pp 3615-3629 (2024)
Single-photon emitters (SPEs) hold the key to many quantum technologies including quantum computing. In particular, developing a scalable array of identical SPEs can play an important role in preparing single photons – crucial resources for computa
Externí odkaz:
https://doaj.org/article/f97edcf81eef4313b788a64367122bdd
Publikováno v:
Advanced Science, Vol 11, Iss 40, Pp n/a-n/a (2024)
Abstract The discovery of polar metal opens the door to incorporating electric polarization into electronics with the potential to invigorate next‐generation multifunctional electronic devices. Especially, electric polarization can be induced by ge
Externí odkaz:
https://doaj.org/article/65767e7327fa4b87a9ee2b724dcb6625
Publikováno v:
Frontiers in Cell and Developmental Biology, Vol 12 (2024)
Externí odkaz:
https://doaj.org/article/de30ebc63e3f42f390a916fe77ad4a3c
Autor:
Jie Wang, Zhen Liu, Qixiang Wang, Fang Nie, Yanan Chen, Gang Tian, Hong Fang, Bin He, Jinrui Guo, Limei Zheng, Changjian Li, Weiming Lü, Shishen Yan
Publikováno v:
Advanced Science, Vol 11, Iss 25, Pp n/a-n/a (2024)
Abstract The engineering of ferroic orders, which involves the evolution of atomic structure and local ferroic configuration in the development of next‐generation electronic devices. Until now, diverse polarization structures and topological domain
Externí odkaz:
https://doaj.org/article/c590d122ddec41159d07c8bc1babb2af
Autor:
T.U. Schülli, E Dollekamp, Z Ismaili, N. Nawaz, T. Januel, T. Billo, P. Brumund, H. Djazouli, S.J. Leake, M. Jankowski, V. Reita, M. Rodriguez, L. André, A. Aliane, Y.M. Le Vaillant
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100489- (2024)
Imposing and controlling strain in materials such as semiconductors or ferroelectrics is a promising way to obtain new or enhance existing properties. Although the field of strain engineering has seen a rapid expansion over the last two decades, stra
Externí odkaz:
https://doaj.org/article/83b0da7329ea442b8b34759b3eddd591
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 770-774 (2024)
Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology computer-aided design (TCAD) device simulation data of GAA field-effec
Externí odkaz:
https://doaj.org/article/6c071d2c300e4f238f314d4c7ad003f4
Publikováno v:
Fermentation, Vol 10, Iss 10, p 526 (2024)
Clavulanic acid is a potent β-lactamase inhibitor produced by Streptomyces clavuligerus, widely used in combination with β-lactam antibiotics to combat antimicrobial resistance. This systematic review analyzes the most successful methodologies for
Externí odkaz:
https://doaj.org/article/2bc875bc295b4a30b76c8743d29e1747
Publikováno v:
Advanced Science, Vol 11, Iss 19, Pp n/a-n/a (2024)
Abstract Interlayer incommensurateness slippage is an excellent pathway to realize superlubricity of van der Waals materials; however, it is instable and heavily depends on twisted angle and super‐smooth substrate which pose great challenges for th
Externí odkaz:
https://doaj.org/article/51fae9ae5e104944a4de0b01d55b13b6
Publikováno v:
Advanced Science, Vol 11, Iss 19, Pp n/a-n/a (2024)
Abstract Graphene is used as a growth template for van der Waals epitaxy of organic semiconductor (OSC) thin films. During the synthesis and transfer of chemical‐vapor‐deposited graphene on a target substrate, local inhomogeneities in the graphen
Externí odkaz:
https://doaj.org/article/55674eafc46d4a929eca22cbafccd368