Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Stradi, Daniele"'
The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic configuration i
Externí odkaz:
http://arxiv.org/abs/1911.09521
Autor:
Smidstrup, Søren, Markussen, Troels, Vancraeyveld, Pieter, Wellendorff, Jess, Schneider, Julian, Gunst, Tue, Verstichel, Brecht, Stradi, Daniele, Khomyakov, Petr A., Vej-Hansen, Ulrik G., Lee, Maeng-Eun, Chill, Samuel T., Rasmussen, Filip, Penazzi, Gabriele, Corsetti, Fabiano, Ojanperä, Ari, Jensen, Kristian, Palsgaard, Mattias L. N., Martinez, Umberto, Blom, Anders, Brandbyge, Mads, Stokbro, Kurt
Publikováno v:
S{\o}ren Smidstrup et. al. 2020 J. Phys.: Condens. Matter 32 015901
QuantumATK is an integrated set of atomic-scale modelling tools developed since 2003 by professional software engineers in collaboration with academic researchers. While different aspects and individual modules of the platform have been previously pr
Externí odkaz:
http://arxiv.org/abs/1905.02794
Publikováno v:
Phys. Rev. B 99, 155420 (2019)
Using density functional theory calculations and the Greens's function formalism, we report the existence of magnetic edge states with a non-collinear spin texture present on different edges of the 1T' phase of the three monolayer transition metal di
Externí odkaz:
http://arxiv.org/abs/1812.09082
Autor:
Smidstrup, Søren, Stradi, Daniele, Wellendorff, Jess, Khomyakov, Petr A., Vej-Hansen, Ulrik G., Lee, Maeng-Eun, Ghosh, Tushar, Jónsson, Elvar, Jónsson, Hannes, Stokbro, Kurt
Publikováno v:
Phys. Rev. B 96, 195309 (2017)
We present an efficient implementation of a surface Green's-function method for atomistic modeling of surfaces within the framework of density functional theory using a pseudopotential localized basis set approach. In this method, the system is descr
Externí odkaz:
http://arxiv.org/abs/1707.02141
The geometry and structure of an interface ultimately determines the behavior of devices at the nanoscale. We present a generic method to determine the possible lattice matches between two arbitrary surfaces and to calculate the strain of the corresp
Externí odkaz:
http://arxiv.org/abs/1702.00933
Autor:
Markussen, Troels, Palsgaard, Mattias, Stradi, Daniele, Gunst, Tue, Brandbyge, Mads, Stokbro, Kurt
Publikováno v:
Phys. Rev. B 95, 245210 (2017)
We present a conceptually simple method for treating electron-phonon scattering and phonon limited mobilities. By combining Green's function based transport calculations and molecular dynamics (MD), we obtain a temperature dependent transmission from
Externí odkaz:
http://arxiv.org/abs/1701.02883
Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport simulations of gr
Externí odkaz:
http://arxiv.org/abs/1608.05023
Publikováno v:
Phys. Rev. B 93, 155302 (2016)
Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex physics govern
Externí odkaz:
http://arxiv.org/abs/1601.04651
Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby influenci
Externí odkaz:
http://arxiv.org/abs/1511.00812
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.