Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Stone CHENG"'
Publikováno v:
Electronics Letters, Vol 59, Iss 13, Pp n/a-n/a (2023)
Abstract The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test topology is utiliz
Externí odkaz:
https://doaj.org/article/5b4b5daf2e464b9897f42c1334a653f9
Autor:
Ching-Ming Ku, Stone Cheng
Publikováno v:
Applied Sciences, Vol 12, Iss 11, p 5684 (2022)
During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers. To reduce edge particle contamination in plasma etching equ
Externí odkaz:
https://doaj.org/article/ae9a595a4d1d4ed28f549b6f017213a6
Publikováno v:
Sensors, Vol 21, Iss 13, p 4560 (2021)
This paper proposes a multipurpose reinforcement learning based low-level multirotor unmanned aerial vehicles control structure constructed using neural networks with model-free training. Other low-level reinforcement learning controllers developed i
Externí odkaz:
https://doaj.org/article/4a7fb44a393c47f8af39f0c389e5aef3
Publikováno v:
Applied Sciences, Vol 11, Iss 7, p 3257 (2021)
In this paper, a novel control strategy is presented for reinforcement learning with disturbance compensation to solve the problem of quadrotor positioning under external disturbance. The proposed control scheme applies a trained neural-network-based
Externí odkaz:
https://doaj.org/article/b413284ef1d84e1f8c36c29e26bc49be
Publikováno v:
Energies, Vol 14, Iss 8, p 2170 (2021)
In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (VGS) bias stress. Device transfer and transconductance, output, a
Externí odkaz:
https://doaj.org/article/3a0e475b30e3477a864d145987df7239
Publikováno v:
Energies, Vol 14, Iss 3, p 632 (2021)
In this study, we investigated the resonance mechanism of 6.78 MHz resonant wireless power transfer (WPT) systems. The depletion mode of a gallium nitride high-electron-mobility transistor (GaN HEMT) was used to switch the states in a class-E amplifi
Externí odkaz:
https://doaj.org/article/37ac6c0159074f199084e7c051ca1b69
Publikováno v:
Energies, Vol 13, Iss 10, p 2628 (2020)
We present a detailed study of dynamic switching instability and static reliability of a Gallium Nitride (GaN) Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) based cascode switch under off-state (negative bias) Gate bias s
Externí odkaz:
https://doaj.org/article/49250c68f0514e8baa27d6c83c011ca6
Autor:
Hsin-Ping CHOU, Stone CHENG
Publikováno v:
Journal of Thermal Science and Technology, Vol 12, Iss 2, Pp JTST0022-JTST0022 (2017)
This study investigated the heat generation behavior of normally-on GaN FET consisting of multi-chip AlGaN/GaN high electron mobility transistors (HEMTs) cascoded with a low-voltage MOSFET (LVMOS) and a SiC Schottky barrier diode (SBD) in a new desig
Externí odkaz:
https://doaj.org/article/837f22705443435797f05ec0731370b3
Publikováno v:
Sensors, Vol 11, Iss 5, Pp 4808-4829 (2011)
Technological obstacles to the use of rotary-type swing arm actuators to actuate optical pickup modules in small-form-factor (SFF) disk drives stem from a hinge’s skewed actuation, subsequently inducing off-axis aberrations and deteriorating optica
Externí odkaz:
https://doaj.org/article/6e30074cfa0c429bbc19639870ab563f
Publikováno v:
Energies, Vol 10, Iss 2, p 233 (2017)
This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the tra
Externí odkaz:
https://doaj.org/article/0b0c19042a9747bc935c01e643f601c1