Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Stoliar, Pablo"'
Autor:
Tesler, Federico, Adda, Coline, Tranchant, Julien, Corraze, Benoit, Janod, Etienne, Cario, Laurent, Stoliar, Pablo, Rozenberg, Marcelo
Publikováno v:
Phys. Rev. Applied 10, 054001 (2018)
We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a short lived
Externí odkaz:
http://arxiv.org/abs/1711.05206
Publikováno v:
Appl. Phys. Lett. 110, 013502 (2017)
Controlling the insulator-to-2D-metal transition is a promising key to overcome the scaling problem that silicon-based electronic devices will face in the near future. In this context, we examine the channel formation of SrTiO3-based solid-gated fiel
Externí odkaz:
http://arxiv.org/abs/1701.08549
Autor:
Goren, Emanuelle, Ungureanu, Mariana, Zazpe, Raul, Rozenberg, Marcelo, Hueso, Luis E., Stoliar, Pablo, Tsur, Yoed, Casanova, Fèlix
Publikováno v:
Appl. Phys. Lett. 105, 143506 (2014)
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been e
Externí odkaz:
http://arxiv.org/abs/1410.2019
Autor:
Stoliar, Pablo, Cario, Laurent, Janod, Etienne, Corraze, Benoit, Guillot-Deudon, Catherine, Salmon-Bourmand, Sabrina, Guiot, Vincent, Tranchant, Julien, Rozenberg, Marcelo
Publikováno v:
Advanced Materials 25, 23 (2013) 3222-3226
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transi
Externí odkaz:
http://arxiv.org/abs/1309.5315
Autor:
Eyvazov, Azar B., Inoue, Isao H., Stoliar, Pablo, Rozenberg, Marcelo J., Panagopoulos, Christos
Publikováno v:
Scientific Reports 3, 1721 (2013)
Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transi
Externí odkaz:
http://arxiv.org/abs/1305.1440
Autor:
Guiot, Vincent, Cario, Laurent, Janod, Etienne, Corraze, Benoit, Phuoc, Vinh Ta, Rozenberg, Marcelo, Stoliar, Pablo, Cren, Tristan, Roditchev, Dimitri
Publikováno v:
Nature Communications 4 (2013) 1722
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about t
Externí odkaz:
http://arxiv.org/abs/1304.4749
Publikováno v:
In Organic Electronics 2011 12(5):851-856
Akademický článek
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Autor:
Adda, Coline, Corraze, Benoit, Stoliar, Pablo, Diener, Pascale, Tranchant, Julien, Filatre-Furcate, Agathe, Fourmigué, Marc, Lorcy, Dominique, Besland, Marie-Paule, Janod, Etienne, Cario, Laurent
Publikováno v:
Journal of Applied Physics; 2018, Vol. 124 Issue 15, pN.PAG-N.PAG, 7p, 2 Diagrams, 3 Graphs
Autor:
Albonetti, Cristiano, Chiodini, Stefano, Annibale, Paolo, Stoliar, Pablo, Martínez, Ramsés V., García García, Ricardo, Biscarini, Fabio
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
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[EN] Phase-mode electrostatic force microscopy (EFM-Phase) is aviable technique to image surface electrostatic potential ofsilicon oxide stripes fabricated by oxidation scanning probelithography, exhibiting an inhomogeneous distribution of lo-calized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4b3e4aaca079c57cd60b4dcf8f2a6024
http://hdl.handle.net/10261/216620
http://hdl.handle.net/10261/216620