Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Stojanović Vladica"'
Autor:
Kevkić Tijana S., Nikolić Vojkan R., Stojanović Vladica S., Milosavljević Dragana D., Jovanović Slavica J.
Publikováno v:
Open Physics, Vol 20, Iss 1, Pp 106-116 (2022)
Modeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling is based on the analytical solution of two-dimensional Po
Externí odkaz:
https://doaj.org/article/204f7d0396df4d2c9cb4639174124cf7
Autor:
Kevkić Tijana, Stojanović Vladica
Publikováno v:
The University Thought: Publication in Natural Sciences, Vol 8, Iss 2, Pp 73-78 (2018)
Introduction of the Interpolation Logistic (IL) function in an approximate Surface-Potential-Based MOSFET model has been proposed in this paper. This function can be precisely determined in accordance with different MOSFET device characteristics. The
Externí odkaz:
https://doaj.org/article/e5d3cfb9b93f4a50b6886d2aded6a2c0
Autor:
Stojanović Vladica, Kevkić Tijana
Publikováno v:
The University Thought: Publication in Natural Sciences, Vol 8, Iss 1, Pp 40-45 (2018)
The application of the homotopy perturbation method (HPM) in two different research's area has been proposed in this paper. First, the HPM has been used for approximate solving of the well-known implicit equation for electrostatic surface potential o
Externí odkaz:
https://doaj.org/article/75d7b95479e142529c2deff9ee62f86e
Publikováno v:
Science of Sintering, Vol 50, Iss 2, Pp 225-235 (2018)
In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL
Externí odkaz:
https://doaj.org/article/2cbf0e3853fd453b98e85a33829190eb
Publikováno v:
The University Thought: Publication in Natural Sciences, Vol 6, Iss 2, Pp 55-60 (2016)
The modification of an important transition's factor which enables continual behavior of the surface potential in entire useful range of MOSFET operation is presented. The various modifications have been made in order to obtain an accurate and comput
Externí odkaz:
https://doaj.org/article/01c2fe90409b453c97dbd29cd0f07be7
Publikováno v:
The University Thought: Publication in Natural Sciences, Vol 6, Iss 2, Pp 47-54 (2016)
The goal of this study is to reveal possible influence that the participants' age and Information and Communications Technologies (ICT) usage in the instruction process can have on behavior that defines whether students and teachers belong to one of
Externí odkaz:
https://doaj.org/article/be93dfeb8136488db24e4caaa3bf9183
Publikováno v:
Serbian Journal of Electrical Engineering, Vol 9, Iss 3, Pp 325-342 (2012)
In this paper, the design of a Finite Impulse Response (FIR) filter based on the residue number system (RNS) is presented. We chose to implement it in the (RNS), because the RNS offers high speed and low power dissipation. This architecture is bas
Externí odkaz:
https://doaj.org/article/bab43764a4574d5488523d626d093769
Autor:
Stojanović, Vladica S.1 (AUTHOR) mihailo.jovanovic@kpu.edu.rs, Jovanović, Mihailo1 (AUTHOR), Pažun, Brankica2 (AUTHOR) brankica.pazun@fim.rs, Langović, Zlatko3 (AUTHOR) zlatko.langovic@kg.edu.rs, Grujčić, Željko2 (AUTHOR) zeljko.grujcic@fim.rs
Publikováno v:
Symmetry (20738994). Nov2024, Vol. 16 Issue 11, p1513. 22p.
Autor:
Stojanović, Vladica S.1 (AUTHOR) mihailo.jovanovic@kpu.edu.rs, Jovanović Spasojević, Tanja2 (AUTHOR) tanja.jovanovic@pr.ac.rs, Jovanović, Mihailo1 (AUTHOR)
Publikováno v:
Mathematics (2227-7390). Jul2024, Vol. 12 Issue 14, p2282. 21p.
Application of the Concept of Statistical Causality in Integrable Increasing Processes and Measures.
Autor:
Valjarević, Dragana1,2 (AUTHOR) dragana.valjarevic@pr.ac.rs, Stojanović, Vladica3 (AUTHOR) vladica.stojanovic@kpu.edu.rs, Valjarević, Aleksandar4 (AUTHOR) aleksandar.valjarevic@gef.bg.ac.rs
Publikováno v:
Axioms (2075-1680). Feb2024, Vol. 13 Issue 2, p124. 10p.