Effect of Ion Flux in Source-Drain Extension Ion Implantation for 10-nm Node FinFet and beyond on 300/450mm Platforms

Autor: Hidekazu Matsugi, Ming-Yi Shen, Stock Chang, Takeshi Hayakawa, Christopher L. Borst, Adarsh Basavalingappa

Publikováno v: 2016 21st International Conference on Ion Implantation Technology (IIT).

The effects of very high ion flux and very large ion beam current need to be investigated if very high ion flux is to be considered as a method of throughput increase for high-current ion implantation. In this work, Synopsys TCAD Sentaurus was used t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82d5ecf832b33af5e93018d337434576
https://doi.org/10.1109/iit.2016.7882867

STI 28nm pitch guided DSA to enable the 450mm tools qualification and transition

Autor: Stock Chang, Shannon Dunn, Wenli Collison, Daniel Franca, Jong-heun Lim, Christopher L. Borst, Anne-Sophie Larrea, Janghee Lee

Publikováno v: 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

One of the options to reduce the cost related to the next generation of devices in the semiconductor industry is the scale up of the wafer size from 300mm to 450mm. The 450mm transition requires the development and qualification of new tools and proc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::120ba07235607721383bb9628b025995
https://doi.org/10.1109/asmc.2016.7491134

Noncontact, in-line measurement of boron concentration from ultrathin boron-doped epitaxial Si1–xGex layers on Si(100) by multiwavelength micro-Raman spectroscopy

Autor: Toshikazu Ishigaki, Chyi Shieng Chern, Woo Sik Yoo, Noriyuki Hasuike, Chi-Ming Yang, Kitaek Kang, John Lin, Scott Ku, Stock Chang, Takeshi Ueda, Hiroshi Harima, Yu Fen Tzeng

Publikováno v: Journal of Materials Research. 26:739-744

The possibility and suitability of micro-Raman spectroscopy as a noncontact, in-line measurement technique for boron (B) concentration in ultrathin (20~35 nm thick) Si1–xGex layers epitaxially grown on 300 mm diameter p−-Si(100) wafers, by ultrah

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e8a80f2b7328156ffa962c97c190266f
https://doi.org/10.1557/jmr.2010.62

High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

Autor: Hun-Jan Tao, H. C. Lin, Huan-Just Lin, Lee Chia-Fu, P.C. Yen, C.H. Huang, Yuan-Hung Chiu, W.S. Huang, C. C. Wu, King-Yuen Wong, Chun Chen, Stock Chang, Wang Shiang-Bau, Li-Shiun Chen, S.W. Chuang, Po-Kang Wang, Ming-Jie Huang, X.F. Yu, S.Y. Ku, Chien-Chao Huang, M.L. Cheng, Yung-Huei Lee, K. F. Yu, T.H. Li, C.M. Wu, Y. C. Peng, C.H. Tsai, Y.C. Lin, Tsz-Mei Kwok, Yi-Chun Huang, P.S. Lim, T.C. Gan, Tzong-Lin Wu, K.Y. Hsu, L.Y. Yang, S.S. Lin, L.W. Weng, T.H. Hsieh, F.K. Yang, C.T. Chan, Eric Ou-Yang, P.C. Hsieh, Derek Lin, S.B. Wang, Ming-Jer Chen, A. Keshavarzi, Chih-Yuan Lu, Chuan-Ping Hou, L.T. Lin, J.L. Yang, Yuh-Jier Mii, Chien-Chang Su, J.H. Chen, Hsieh Ching-Hua, Huan-Neng Chen, Y.W. Tseng, C. P. Lin, Chou Chun-Hao, A.S. Chang, Tseng Chien-Hsien, S.H. Liao, Tsung-Lin Lee, M. Cao

Publikováno v: 2010 International Electron Devices Meeting.

A high performance 22/20nm CMOS bulk FinFET achieves the best in-class N/P I on values of 1200/1100 µA/µm for I off =100nA/µm at 1V. Excellent device electrostatic control is demonstrated for gate length (L gate ) down to 20nm. Dual-Epitaxy and mu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4c6b433e020bd0d422f4c784d225937
https://doi.org/10.1109/iedm.2010.5703430