Zobrazeno 1 - 10
of 179
pro vyhledávání: '"Stinaff, E. A."'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Garrido, Mauricio, Wijesundara, Kushal C., Ramanathan, Swati, Stinaff, E. A., Scheibner, M., Bracker, A. S., Gammon, D.
Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present initial res
Externí odkaz:
http://arxiv.org/abs/0901.4772
Autor:
Wijesundara, Kushal C., Garrido, Mauricio, Ramanathan, Swati, Stinaff, E. A., Scheibner, M., Bracker, A. S., Gammon, D.
Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin control. Pola
Externí odkaz:
http://arxiv.org/abs/0901.4751
Autor:
Scheibner, M., Ponomarev, I. V., Stinaff, E. A., Doty, M. F., Bracker, A. S., Hellberg, C. S., Reinecke, T. L., Gammon, D.
Publikováno v:
Phys. Rev. Lett. 99, 197402 (2007)
We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectr
Externí odkaz:
http://arxiv.org/abs/0705.1205
Autor:
Bracker, A. S., Scheibner, M., Doty, M. F., Stinaff, E. A., Ponomarev, I. V., Kim, J. C., Whitman, L. J., Reinecke, T. L., Gammon, D.
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609147
Autor:
Doty, M. F., Scheibner, M., Ponomarev, I. V., Stinaff, E. A., Bracker, A. S., Korenev, V. L., Reinecke, T. L., Gammon, D.
We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increa
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608198
Autor:
Scheibner, M., Doty, M. F., Ponomarev, I. V., Bracker, A. S., Stinaff, E. A., Korenev, V. L., Reinecke, T. L., Gammon, D.
Publikováno v:
Phys. Rev. B 75, 245318 (2007) (9 pages)
The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607241
Autor:
Ware, M. E., Stinaff, E. A., Gammon, D., Doty, M. F., Bracker, A. S., Gershoni, D., Korenev, V. L., Badescu, S. C., Lyanda-Geller, Y., Reinecke, T. L.
Publikováno v:
Phys. Rev. Lett. 95 (2005) 177403
We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the ele
Externí odkaz:
http://arxiv.org/abs/cond-mat/0506624
Autor:
Bracker, A. S., Stinaff, E. A., Gammon, D., Ware, M. E., Tischler, J. G., Shabaev, A., Efros, Al. L., Park, D., Gershoni, D., Korenev, V. L., Merkulov, I. A.
We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the charge from positive to neutral to negative using a Schottky diode. We observe that photoluminescence polarization memory has the same
Externí odkaz:
http://arxiv.org/abs/cond-mat/0408466
Autor:
Dzhioev, R. I., Kavokin, K. V., Korenev, V. L., Lazarev, M. V., Poletaev, N. K., Zakharchenya, B. P., Stinaff, E. A., Gammon, D., Bracker, A. S., Ware, M. E.
We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakono
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407133