Void formation and bond strength investigated for wafer-level Cu-Sn solid-liquid interdiffusion (SLID) bonding

Autor: Adriana Lapadatu, Knut E. Aasmundtveit, Greg R. Hayes, H. J. van de Wiel, Astrid-Sofie B. Vardoy, Stian Martinsen, Maaike M. Visser Taklo, Hartmut R. Fischer

Publikováno v: International Symposium on Microelectronics. 2013:000717-000722

Hermetic wafer-level Cu-Sn solid-liquid interdiffusion (SLID) bonding was investigated to explore the sensitivity of selected process parameters with regard to voiding and possible reduction of strength. Little or no variation was observed in the voi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3975b974aa40ce4bb1f793828ef52be9
https://doi.org/10.4071/isom-2013-wp44

Residual stress in silicon caused by Cu-Sn wafer-level packaging

Autor: V. Simons, Adri van der Waal, Stian Martinsen, Maaike M. Visser Taklo, Ingrid De Wolf, Adriana Lapadatu, Bernhard Wunderle, Astrid-Sofie B. Vardoy, H. J. van de Wiel

Publikováno v: ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013, 16 July 2013 through 18 July 2013, Burlingame, CA

The level of stress in silicon as a result of applying Cu-Sn SLID wafer level bonding to hermetically encapsulate a highperformance infrared bolometer device was studied. Transistors are present in the read out integrated circuit (ROIC) of the device

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d9b2d72d97d7747172db861a78338c8
http://resolver.tudelft.nl/uuid:bfe70d7a-239d-4ab9-8de8-26cae1237a7a