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Autor:
Satish Singh, Loyd Perrymore, Amit Gupta, Fauzia Khatkhatay, Stewart Wenner, Carlos Chacon, Danda P. Acharya
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
High temperature anneals are required for densification of oxide-gap fill shallow trench isolation structures. A major concern in these processes is wafer deformation and substrate damage, which raises reliability concerns. The corresponding defects,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373b286b62babfc2fa2c7338c986bee4
https://doi.org/10.1109/asmc.2018.8373217
https://doi.org/10.1109/asmc.2018.8373217
