Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Stewart Edward Hooper"'
Publikováno v:
MRS Proceedings. 955
The structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5b771da6ee9dc2a4be1f477d4effd39
https://doi.org/10.1557/proc-0955-i07-28
https://doi.org/10.1557/proc-0955-i07-28
Autor:
P. M. F. J. Costa, Jonathan Heffernan, Colin J. Humphreys, Huixin Xiu, Matthias Kauer, Tim Michael Smeeton, Stewart Edward Hooper
Publikováno v:
MRS Proceedings. 955
This paper reports on the study of defects in p-type layers in III-nitride laser structures grown by molecular beam epitaxy. Characterization of the heterostructures was carried out using atomic force microscopy and transmission electron microscopy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f6c2e0d22eaa394b941fd967a7a619e
https://doi.org/10.1557/proc-0955-i04-07
https://doi.org/10.1557/proc-0955-i04-07
Autor:
Vicki J. Keast, Stewart Edward Hooper, Alistair Henderson Kean, Colin J. Humphreys, Nikhil Sharma, D. M. Tricker, Jenny Barnes, Jon Heffernan
Publikováno v:
MRS Proceedings. 595
Although GaN has been grown mainly by metal organic chemical vapour deposition (MOCVD), molecular beam epitaxy (MBE) offers the advantages of lower growth temperatures and a more flexible control over doping elements and their concentrations [1]. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f9949216311d0a89ee56efd55601a20
https://doi.org/10.1557/proc-595-f99w3.34
https://doi.org/10.1557/proc-595-f99w3.34
Autor:
S.E. Bennett, Rachel A. Oliver, Tim Michael Smeeton, George Davey Smith, David W. Saxey, Colin J. Humphreys, Stewart Edward Hooper, Jonathan Heffernan
Publikováno v:
Journal of Applied Physics. 111:053508
Atom probe tomography (APT) has been used to achieve three-dimensional characterization of a III-nitride laser diode (LD) structure grown by molecular beam epitaxy (MBE). Four APT data sets have been obtained, with fields of view up to 400 nm in dept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be205ad65f3f441c98efe355ed06d11b
https://doi.org/10.1063/1.3692569
https://doi.org/10.1063/1.3692569
Autor:
Thierry Amand, Jonathan Heffernan, Andrea Balocchi, Xavier Marie, Delphine Lagarde, Stewart Edward Hooper, M. Sénès, Katherine L. Smith
Publikováno v:
Applied Physics Letters. 94:223114
We report on the experimental evidence of the manipulation of the exciton spin in InGaN quantum dots through the application of an external electric field up to room temperature. Furthermore, we have found the exciton spin relaxation to be independen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22808c0c48e525317360b28237dbe141
https://doi.org/10.1063/1.3151823
https://doi.org/10.1063/1.3151823