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Autor:
Youssef Travaly, Anne Jourdain, Leonardus H. A. Leunissen, Kurt Wostyn, Patrick Laermans, Steven de Strycker, Ming Zhao, Greet Verbinnen, Herbert Struyf, Hu Shan Cui, Martine Claes
Publikováno v:
Solid State Phenomena. 187:265-268
Exposure of TSVs from the backside in 3D-SIC is a multistep process [1-. Two steps in this process flow (thinning module) are potentially a high risk for particle contamination: wafer edge trimming and wafer thinning by grinding.