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pro vyhledávání: '"Steven Sheffield"'
Autor:
Stevan Hunter, Jason Schofield, Steven Sheffield, Troy Ruud, Kyle Wilkins, Bryce Rasmussen, Cesar Salas, Marco Salas, Jose Martinez, Vail McBride
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 3:880-887
IC pad damage from a wafer probe can be detrimental to wire-bond yield and product reliability. In this paper, bond pads are harshly probed on traditional pads and a variety of experimental circuit-under-pad (CUP) structures in technologies having al
Autor:
Marco Salas, Kyle Wilkins, Stevan Hunter, Cesar Salas, Jose Martinez, Jason Schofield, Steven Sheffield
Publikováno v:
International Symposium on Microelectronics. 2011:000491-000501
IC bond pad structural reliability is studied for a variety of experimental pad designs in a 0.18um technology, having patterned metallization to simulate bond-over-active-circuitry (BOAC) situations in top-metal-minus-one and below. Underlying films
Autor:
Jason Schofield, Troy Ruud, Cesar Salas, Bryce Rasmussen, Marco Salas, Jim Workman, Kyle Wilkins, Jose Martinez, Steven Sheffield, Stevan Hunter
Publikováno v:
International Symposium on Microelectronics. 2011:000249-000257
This paper discusses layout design rules for successful Cu wire bond-over-active-circuitry (BOAC) in 0.18 micron and other IC technologies having Al metallization interconnects (two-level metal and up) in SiO2 dielectric, with W vias. The resulting b
Autor:
Colin Walker, Klaus Kaiser, Werner Klein, Laurent Lagadic, David Peakall, Steven Sheffield, Thomas Soldan, Masayuki Yasuno
Publikováno v:
Environmental Health Perspectives. 106:441
Autor:
J. Steven Sheffield
Publikováno v:
Physics of Fluids. 20:543
The two‐dimensional trajectories of an ideal vortex pair near an orifice are calculated. Three geometries are examined, and the criteria for the vortices to travel away from the orifice are determined.
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