Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology

Autor: Z. Fang, Damien Lenoble, M Juhel, Y Rault, Jay T. Scheuer, J.-P Reynard, F. Lallement, Steven R. Walther, Ludovic Godet, A. Grouillet

Publikováno v: Surface and Coatings Technology. 186:17-20

As semiconductor devices keep shrinking in size, the fabrication of ultra-shallow junctions (USJ) is becoming a key issue for future CMOS technologies. In this study, we propose for the first time to demonstrate and extensively characterize the capab

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::76a6fdfced34eb61b761ea998e5caf5b
https://doi.org/10.1016/j.surfcoat.2004.04.004

Plasma doping for the fabrication of ultra-shallow junctions

Autor: S.B. Felch, Z. Fang, Steven R. Walther, D. Hacker, Reuel B. Liebert, Bon-Woong Koo

Publikováno v: Surface and Coatings Technology. 156:229-236

Pulsed plasma doping (P 2 LAD) is an alternate doping technique for the formation of ultra-shallow junctions in silicon wafers. In the P 2 LAD technique, a pulsed negative voltage applied to the silicon substrate creates a plasma containing the desir

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8e0117a6df94136eca8a8a17365550f
https://doi.org/10.1016/s0257-8972(02)00097-x

Plasma doping implant depth profile calculation based on ion energy distribution measurements

Autor: Gilles Cartry, Timothy J. Miller, Ludovic Godet, Damien Lenoble, Steven R. Walther, Z. Fang, Christophe Cardinaud, Svetlana Radovanov, Jt Scheuer, F. Lallement, E.A. Arevalo

Publikováno v: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2006, 24, pp.2391. ⟨10.1116/1.2353841⟩

International audience; In traditional beamline implantation, the incident ion mass and energy are well known parameters and simulation programs are available to predict the implant profiles. In plasma based ion implantation, all ionized species pres

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bbf09c50a0b990f4a8150233c2fcc1b
https://hal.archives-ouvertes.fr/hal-00379624/document

Comparison of ultra-shallow junctions with PLAD and beamline implantation

Autor: Steven R. Walther, Reuel B. Liebert, D. Lenoble, E.A. Arevalo, S.B. Felch, A. Grouillet, Z. Fang, Bon-Woong Koo

Publikováno v: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

As device manufacturers consider the use of pulsed plasma doping (PLAD) for production doping, they are becoming concerned about insertion of the PLAD process into their present process flows. In particular, they need to be confident that an annealed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d20df534b0f9bcfbf61cb31e1145b432
https://doi.org/10.1109/iit.2000.924194

Implant dosimetry results for plasma doping

Autor: Ziwei Fang, D. Lenoble, Steven R. Walther, Reuel B. Liebert

Publikováno v: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

A system for accurate and repeatable implant dose measurement for plasma doping architectures must circumvent a number of possible pitfalls. Such a system must accurately count ions crossing the pulsed plasma sheath to the wafer surface, while that s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c494afdfae64e19ddba2d9133dcfa83
https://doi.org/10.1109/iit.2000.924195