Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Steven R. Droes"'
Publikováno v:
IEEE Transactions on Electron Devices. 51:560-568
The sequential lateral solidification (SLS) process is an excimer-laser projection-based scheme for crystallization of thin films on amorphous substrates. This method can be used to readily produce a wide range of microstructures through manipulation
Publikováno v:
Advanced Materials. 10:1129-1133
Publikováno v:
MRS Proceedings. 1402
Optimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D ele
Autor:
K. Tomiyasu, Y. Fukushima, Kenshi Tada, John W. Hartzell, Yasuyuki Ogawa, Y. Takafuji, Steven R. Droes, E. Kobayashi, S. Matsumoto, Y. Watanabe, Michiko Takei, Apostolos T. Voutsas, H. Kobayashi
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
Submicron single crystal-Si TFTs and a test circuit are integrated on a 320 mm × 400 mm ( Gen 1 ) glass substrate for the first time, by transferring devices using hydrogen exfoliation and direct bonding without adhesive. Characteristics of the NMOS
Autor:
Steven R. Droes, Mark A. Crowder, Apostolos T. Voutsas, Mikel M. Atkinson, Patrick R. Guthrie
Publikováno v:
SPIE Proceedings.
For laser crystallization of amorphous silicon, plasma enhanced chemical vapor deposition (PECVD) is the method of choice for a-Si precursor deposition. This situation is likely to change, however, with the transition to higher performance polysilico
Publikováno v:
SPIE Proceedings.
Large-area microelectronic applications require high-performance thin-film transistors for driver circuits. This is especially true in the case of "system-on-panel" applications where high levels of circuit integration are required to drive displays
Autor:
Pooran Chandra Joshi, James S. Flores, Steven R. Droes, Mark A. Crowder, John W. Hartzell, Masao Moriguchi, Apostolos T. Voutsas
Publikováno v:
SPIE Proceedings.
We report on the fabrication and characterization of SiO 2 thin films by high-density plasma enhanced chemical vapor deposition (HD-PECVD) technique at a processing temperature lower than 400°C for gate dielectric applications in thin film transisto
Publikováno v:
MRS Proceedings. 300
We are examining dry processes for wafer cleaning and producing patterned thin films of metal oxides. This research focuses on determining the kinetics and mechanism of the reaction between ß-diketones and selected metal oxides. Preliminary experime
Conference
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