Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Steven P. Hepplestone"'
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.
Externí odkaz:
https://doaj.org/article/b7d7b96b3771424897e253d4f2ef6184
Publikováno v:
Journal of Physics: Condensed Matter. 34:375001
Finding a material with all the desired properties for a photocatalytic water splitter is a challenge yet to be overcome, requiring both a surface with ideal energetics for all steps in the hydrogen and oxygen evolution reactions (HER and OER) and a
Autor:
Scott A. Chambers, Yingge Du, Meng Gu, TimothyC. Droubay, Steven P. Hepplestone, Peter V. Sushko
Publikováno v:
Chemistry of Materials; Jun2015, Vol. 27 Issue 11, p4093-4098, 6p