Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Steven M. Watts"'
Autor:
Xiao Luo, A. Driskill-Smith, Kiseok Moon, D. K. Lottis, Eugene Chen, Adrian E. Ong, Xueti Tang, Vladimir Nikitin, Dmytro Apalkov, Mohamad Towfik Krounbi, Alexey Vasilyevitch Khvalkovskiy, Steven M. Watts
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 9:1-35
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c2775c0687744375cc431ae25e7d21
https://doi.org/10.1145/2463585.2463589
https://doi.org/10.1145/2463585.2463589
Autor:
D. K. Lottis, S.J. Poon, Vladimir Nikitin, Mircea R. Stan, Mohamad Towfik Krounbi, William H. Butler, Kiseok Moon, Rosa A. Lukaszew, A. Driskill-Smith, P. B. Visscher, Steven M. Watts, Dmytro Apalkov, Jiwei Lu, Eugene Chen, Subhadra Gupta, Avik W. Ghosh, Tim Mewes, Stuart A. Wolf, R. Kawakami, X. Tang, Alexey Vasilyevitch Khvalkovskiy, A. Ong, Claudia Mewes
Publikováno v:
IEEE Transactions on Magnetics. 48:3025-3030
We report our progress on material improvement, device design, wafer processing, integration with CMOS, and testing of STT-RAM memory chips at 54 nm node with cell sizes of 14 and 28 F2 (F=54 nm). A dual tunnel barrier MTJ structure was found to have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5de19d964ed399718a490a3b2b3dbc1
https://doi.org/10.1109/tmag.2012.2198451
https://doi.org/10.1109/tmag.2012.2198451
Autor:
Vladimir Nikitin, A. Driskill-Smith, Dmytro Apalkov, Zhitao Diao, Eugene Chen, Steven M. Watts
Publikováno v:
IEEE Transactions on Magnetics. 46:2240-2243
Spin transfer torque switching-basis of operation of innovative memory technology-STT-RAM (spin transfer torque memory) has been actively studied in the recent years with two prevalent technologies emerging at fast pace: in-plane and perpendicular. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56ed998af9043f7c8627ab43fecd4961
https://doi.org/10.1109/tmag.2010.2041330
https://doi.org/10.1109/tmag.2010.2041330
Publikováno v:
Journal of Magnetism and Magnetic Materials. 280:322-326
A detailed study of the in-plane magnetotransport properties of spin valves with one and two Fe 3 O 4 electrodes is presented. Fe 3 O 4 /Au/Fe 3 O 4 spin valves exhibit a clear anisotropic magnetoresistance in small magnetic fields but no giant magne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20863326145f043423c71387d686fdbf
https://doi.org/10.1016/j.jmmm.2004.03.030
https://doi.org/10.1016/j.jmmm.2004.03.030
Publikováno v:
Journal of Applied Physics. 95:7465-7467
Magnetite thin films with a preferred (111) orientation have been deposited by reactive dc magnetron sputtering from a pure Fe target onto (100) GaAs substrates at 400 °C. The films show a clear Verwey transition in both the magnetization and sheet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2563b44c417babd0826ab95fe6f2cc2d
https://doi.org/10.1063/1.1652418
https://doi.org/10.1063/1.1652418
Autor:
R. Kawakami, Vladimir Nikitin, X. Tang, Dmytro Apalkov, Eugene Chen, Alexey Vasilyevitch Khvalkovskiy, Steven M. Watts, D. K. Lottis, X. Luo, K. Moon, Adrian E. Ong, A. Driskill-Smith, Mohamad Towfik Krounbi
Publikováno v:
2011 3rd IEEE International Memory Workshop (IMW).
STT-RAM (Spin-Transfer Torque Random Access Memory) is a second-generation magnetic random access memory (MRAM) technology that is fast, non-volatile, durable, and scalable to future technology nodes [1-2]. In this paper, we present the latest advanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eab7a036b936448f87f1178a62a5bd5
https://doi.org/10.1109/imw.2011.5873205
https://doi.org/10.1109/imw.2011.5873205
Autor:
X. Tang, Vladimir Nikitin, Dmytro Apalkov, D. Druist, Eugene Chen, A. Driskill-Smith, Steven M. Watts, D. K. Lottis
Publikováno v:
68th Device Research Conference.
Non-volatile STT-RAM (spin transfer torque random access memory) is a new memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM and the non-volatility of Flash with essentially unlimited e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e0f8a332d48f97b50be51cdfa4842a
https://doi.org/10.1109/drc.2010.5551975
https://doi.org/10.1109/drc.2010.5551975
Autor:
Adrian E. Ong, Vladimir Nikitin, Eugene Chen, R. Kawakami, D. Druist, X. Tang, A. Driskill-Smith, X. Luo, Dmytro Apalkov, Steven M. Watts
Publikováno v:
2010 Symposium on VLSI Technology.
The thermal stability of STT-RAM is measured by multiple techniques and compared with theory. The read disturb rate is found to be determined by the standby thermal stability, but the error rate at target read currents is higher than expected. The im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cf6e5648480e6d347c6fc5c0f44b483
https://doi.org/10.1109/vlsit.2010.5556124
https://doi.org/10.1109/vlsit.2010.5556124
Autor:
Vladimir Nikitin, X. Luo, A. Driskill-Smith, Adrian E. Ong, Eugene Chen, X. Tang, Z. Diao, Dmytro Apalkov, Steven M. Watts, D. Druist
Publikováno v:
2010 IEEE International Memory Workshop.
STT-RAM (Spin-Transfer Torque Random Access Memory) is a fast (≪10 ns), scalable, durable, non-volatile memory technology that is easily embedded in standard CMOS processes. An STT-RAM memory cell consists of an access transistor and a magnetic tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f9e5e67e744c959d13964e98021fd3
https://doi.org/10.1109/imw.2010.5488325
https://doi.org/10.1109/imw.2010.5488325
Publikováno v:
Physical Review B. 70
The structural, electrical, and magnetic properties of ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}∕\mathrm{Au}∕\mathrm{Fe}$ spin valves on $\mathrm{MgO}(001)$ are presented. In contrast to more conventional spin valve structures, the current-in-plane resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b3a9763e1286976279fdb3b7da1099
https://doi.org/10.1103/physrevb.70.052409
https://doi.org/10.1103/physrevb.70.052409