Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Steven M. Shank"'
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
We investigated and resolved the problem of WAC (wafer acceptable criteria) FET threshold voltage (Vt) fliers in a 130nm technology. Our investigation shows that failed Vt sites on the test maps are due to the incomplete resist removal at boron well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::079f0aa6af6a73b0ce129bc0437d8d29
https://doi.org/10.1109/asmc51741.2021.9435711
https://doi.org/10.1109/asmc51741.2021.9435711
Autor:
Venkata Narayana Rao Vanukuru, Steven M. Shank, Anthony K. Stamper, Balaji Swaminathan, Aaron L. Vallett, Alvin J. Joseph, Rick Phelps, John J. Ellis-Monaghan, Adusumilli Siva P, Mark D. Jaffe, Ananth Sundaram, Michel J. Abou-Khalil, Randy L. Wolf
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Integration of high performance switch with Low Noise Amplifier (LNA) devices results in state of the art performance for 5G Front End Module applications. Here we review switch+ LNA performance metrics and its evolution over the last 10 years and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::860583922fa3636996b47a40adbb3240
https://doi.org/10.1109/s3s.2018.8640205
https://doi.org/10.1109/s3s.2018.8640205
Autor:
Douglas M. Gill, Tymon Barwicz, Chris Breslin, Solomon Assefa, Edward W. Kiewra, Marwan H. Khater, Chi Xiong, Swetha Kamlapurkar, Jonathan E. Proesel, Steven M. Shank, Jason S. Orcutt, Carol Reinholm, William M. J. Green, Jessie Rosenberg, Wilfried Haensch, John J. Ellis-Monaghan, Yurii A. Vlasov
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 21:212-222
We present a 16-Gb/s transmitter composed of a stacked voltage-mode CMOS driver and periodic-loaded reverse biased pn junction Mach–Zehnder modulator. The transmitter shows 9-dB extinction ratio and 10.3-pJ/bit power consumption and operates with 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d28c0adde32d502bc74572077cecf279
https://doi.org/10.1109/jstqe.2014.2381468
https://doi.org/10.1109/jstqe.2014.2381468
Autor:
Chu-hsiang Teng, John J. Ellis-Monaghan, Steven M. Shank, Anthony K. Stamper, Adusumilli Siva P, Mark D. Levy
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Shallow trench isolation (STI) plays an important role in preventing current leakage between active semiconductor regions and enables the industry to scale device density. STI is created early during the device fabrication process, before transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a252dfd2c29e769870a80474c87641
https://doi.org/10.1109/s3s.2017.8309255
https://doi.org/10.1109/s3s.2017.8309255
Autor:
Clint L. Schow, Marwan H. Khater, Edward W. Kiewra, Yurii A. Vlasov, Tymon Barwicz, Renato Rimolo-Donadio, Benjamin G. Lee, Christian W. Baks, Daniel M. Kuchta, Alexander V. Rylyakov, Steven M. Shank, Carol Reinholm, William M. J. Green, Solomon Assefa
Publikováno v:
Journal of Lightwave Technology. 32:743-751
We demonstrate 4 × 4 and 8 × 8 switch fabrics in multistage topologies based on 2 × 2 Mach-Zehnder interferometer switching elements. These fabrics are integrated onto a single chip with digital CMOS logic, device drivers, thermo-optic phase tuner
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65c1e4229f8d4ceb6e726f2d1d6686cb
https://doi.org/10.1109/jlt.2013.2280400
https://doi.org/10.1109/jlt.2013.2280400
Autor:
Charles A. Whiting, Thai Doan, Jessie Rosenberg, Yves Martin, Natalie B. Feilchenfeld, Robert K. Leidy, Carol Reinholm, John J. Ellis-Monaghan, Fuad E. Doany, Tymon Barwicz, D. M. Gill, Wilfried Haensch, Sebastian Engelmann, Marwan H. Khater, Steven M. Shank, Ankur Agrawal, Mounir Meghelli, J. Ferrario, B.J. Offrein, Christian W. Baks, B. Cucci, Jeffrey C. Maling, Eric A. Joseph, Christa R. Willets, Jason S. Orcutt, S. Chilstedt, Edward W. Kiewra, Chi Xiong, Y. Ding, F. Baker, Jens Hofrichter, Frederick G. Anderson, Dinh Dang, Jonathan E. Proesel, Crystal M. Hedges, Frank R. Libsch, M. Nicewicz, Michael S. Gordon, Xiaowei Tian, Bruce W. Porth, K. McLean, W. M. J. Green, Wesley D. Sacher, Andreas D. Stricker, Folkert Horst
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4752de579ffe16728698630b20782bd
https://doi.org/10.1109/iedm.2015.7409768
https://doi.org/10.1109/iedm.2015.7409768
Autor:
John J. Ellis-Monaghan, James A. Slinkman, Michel J. Abou-Khalil, Steven M. Shank, Richard A. Phelps, Zhong-Xiang He, Jeff Gross, Jeffrey P. Gambino, Mark D. Jaffe, Randy L. Wolf, Alan B. Botula, Alvin J. Joseph
Publikováno v:
2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c17dda753c1a9ba7f5c8b7e7470b2a2
https://doi.org/10.1109/sirf.2015.7119865
https://doi.org/10.1109/sirf.2015.7119865
Autor:
Huapu Pan, Steven M. Shank, William M. J. Green, Tymon Barwicz, Wesley D. Sacher, Joyce K. S. Poon, Solomon Assefa, Jared C. Mikkelsen, Douglas M. Gill, Yurii A. Vlasov
Publikováno v:
CLEO: 2014.
We demonstrate microring resonators with full tunability, modulation bandwidths exceeding the linewidth limit, and improved tolerance to wafer-scale variations. Novel device architectures and designs enable microrings to become more practical for int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::591ac2ad1e4cb5c02ebfdb7c04f3bea9
https://doi.org/10.1364/cleo_si.2014.sm3g.1
https://doi.org/10.1364/cleo_si.2014.sm3g.1
Autor:
Jessie Rosenberg, Carol Reinholm, Tymon Barwicz, Steven M. Shank, John J. Ellis-Monaghan, Chi Xiong, Douglas M. Gill, Solomon Assefa, William M. J. Green, Swetha Kamlapurkar, Yurii A. Vlasov, Marwan H. Khater, Edward W. Kiewra, Jonathan E. Proesel
Publikováno v:
CLEO: 2014.
We present a 20 Gb/s monolithically integrated transmitter with stacked CMOS driver and periodic-loaded PN-junction Mach-Zehnder modulator (MZM) fabricated in IBM’s sub-100nm technology node. Transmitter extinction ratios of 10 dB at 20 Gb/s are de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ab6b721bf6046505856b7774af0e18a
https://doi.org/10.1364/cleo_si.2014.sm2g.3
https://doi.org/10.1364/cleo_si.2014.sm2g.3
Autor:
Huapu Pan, Steven M. Shank, Solomon Assefa, William M. J. Green, Joyce K. S. Poon, Yurii A. Vlasov, Jared C. Mikkelsen, Tymon Barwicz, Wesley D. Sacher, Hasitha Jayatilleka, Richard Bojko
Publikováno v:
2013 IEEE Photonics Conference.
Even after decades of investigation, microring resonator devices remain mostly in the realm of research. Reconsiderations of microring designs lead to improved fabrication tolerance, modulation performance, and functionality, paving the path toward p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17d763125320d4edabcbb99f44bae061
https://doi.org/10.1109/ipcon.2013.6656514
https://doi.org/10.1109/ipcon.2013.6656514