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Autor:
Jha Praket P, Vijay D. Parkhe, Marcelynas Stacia, Yong Sun, Jingmei Liang, Deven Raj, A. Srivastava, Lee Jung Chan, Steven M. Anella
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
The plasma doping (PLAD) tool from Applied Materials Varian Semiconductor Equipment consists of an inductively coupled RF ion source and a backside helium-cooled platen with a pulsed negative DC bias to which the wafer is electrostatically clamped. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b9307972f35b057fcd910bbbd4ce414
https://doi.org/10.1109/iit.2018.8807944
https://doi.org/10.1109/iit.2018.8807944
