Výsledky vyhledávání - "Steven Lequeux"

Akademický článek

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

Autor: Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper

Publikováno v: APL Materials, Vol 10, Iss 6, Pp 061104-061104-11 (2022)

Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stabil

Externí odkaz: https://doaj.org/article/f18affcd38e1400d918d6ae237b98a7e

Zobrazit plný text záznamu

Quantitative Visualization of Thermally Enhanced Perpendicular Shape Anisotropy STT-MRAM Nanopillars

Autor: Trevor P. Almeida, Steven Lequeux, Alvaro Palomino, Ricardo C. Sousa, Olivier Fruchart, Ioan-Lucian Prejbeanu, Bernard Dieny, Aurélien Masseboeuf, David Cooper

Publikováno v: Nano Letters
Nano Letters, 2022, 22 (10), pp.4000. ⟨10.1021/acs.nanolett.2c00597⟩

International audience; Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque magnetoresistive random-access memory (STT-MRAM) beyond the sub-20 nm technology node while retaining thermal stability. Howeve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a24a597baf18e2a82ced52367d8caf47
https://doi.org/10.1021/acs.nanolett.2c00597

Zobrazit plný text záznamu

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices

Autor: Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper

Publikováno v: APL Materials
APL Materials, 2022, 10 (6), pp.061104. ⟨10.1063/5.0096761⟩

Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stabil

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::473f346d2ceb0a28018031c201989287
https://hal.science/hal-03648984v2/document

Zobrazit plný text záznamu

Direct observation of the perpendicular shape anisotropy and thermal stability of STT-MRAM nano-pillars examined by off-axis electron holography

Autor: David Cooper, Aurélien Massebouef, Olivier Fruchart, Ioan Lucian Prejbeanu, Richard Sousa, Steven Lequeux, Bernard Dieny, Alvaro Palomino, Trevor Almeida, N. Caçoilo

Publikováno v: Microscopy and Microanalysis
Microscopy and Microanalysis, 2021, 27 (S1), pp.2170-2172. ⟨10.1017/S1431927621007819⟩

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fddfcf2f596dac554f33a0526c71718d
https://doi.org/10.1017/s1431927621007819

Zobrazit plný text záznamu

PSA-STT-MRAM Solution for Extended Temperature Stability

Autor: David Cooper, Bernard Dieny, Steven Lequeux, Alvaro Palomino, N. Caçoilo, Ricardo C. Sousa, Trevor Almeida, Ioan Lucian Prejbeanu

Publikováno v: 2021 IEEE International Memory Workshop (IMW)
2021 IEEE International Memory Workshop (IMW), May 2021, Dresden, Germany. pp.1-4, ⟨10.1109/IMW51353.2021.9439609⟩

The concept of Perpendicular Shape Anisotropy (PSA) spin transfer torque (STT) MRAM has been recently proposed as a solution to achieve downsize scalability of MRAM below sub-10 nm technology nodes, down to 3–4 nm cell size lateral dimensions. In c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e84c51343f80aba2d9b864f67c207093
https://eprints.gla.ac.uk/264954/1/264954.pdf

Zobrazit plný text záznamu

Thermal robustness of magnetic tunnel junctions with perpendicular shape anisotropy

Autor: David Cooper, Eric Gautier, Stéphane Auffret, Laurent Vila, I. L. Prejbeanu, G Gregoire, L Tillie, Steven Lequeux, Liliana D. Buda-Prejbeanu, A P Conlan, N. Perrissin, Bernard Dieny, Nikita Strelkov, E. Di Russo, Ricardo C. Sousa, A Chavent

Publikováno v: Nanoscale
Nanoscale, Royal Society of Chemistry, 2020, 12 (11), pp.6378-6384. ⟨10.1039/C9NR10366J⟩
Nanoscale, 2020, 12 (11), pp.6378-6384. ⟨10.1039/C9NR10366J⟩

The concept of Perpendicular Shape Anisotropy STT-MRAM (PSA-STT-MRAM) has been recently proposed as a solution to enable the downsize scalability of STT-MRAM devices beyond the sub-20 nm technology node. For conventional p-STT-MRAM devices with sub-2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c856d8a670b323d6d62b3953ddb17b1
https://hal.archives-ouvertes.fr/hal-03111525

Zobrazit plný text záznamu

An electron holography study of perpendicular magnetic tunnel junctions nanostructured by deposition on pre-patterned conducting pillars

Autor: David Cooper, Eric Gautier, Lucian Prejbeanu, Ricardo C. Sousa, Jyotirmoy Chatterjee, Alvaro Palomino, Stéphane Auffret, Aurélien Masseboeuf, B. Dieny, Steven Lequeux, Victor Boureau, Laurent Vila, V. D. Nguyen

Publikováno v: Nanoscale
Nanoscale, Royal Society of Chemistry, 2020, 12 (33), pp.17312-17318. ⟨10.1039/D0NR03353G⟩
Nanoscale, 2020, 12 (33), pp.17312-17318. ⟨10.1039/D0NR03353G⟩

International audience; The fabrication of muti-gigabit magnetic random access memory (MRAM) chips requires the patterning of magnetic tunnel junctions at very small dimensions (sub-30 nm) and very dense pitch. This remains a challenge due to the dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8854fafd1b068f79133f3e69f844c3d8

Zobrazit plný text záznamu

Chaos and Relaxation Oscillations in Spin-Torque Windmill Spiking Oscillators

Autor: Steven Lequeux, Julie Grollier, Hiroshi Imamura, Rie Matsumoto

Publikováno v: Physical Review Applied
Physical Review Applied, American Physical Society, 2019, 11 (4), ⟨10.1103/PhysRevApplied.11.044093⟩
Physical Review Applied, 2019, 11 (4), ⟨10.1103/PhysRevApplied.11.044093⟩

Spintronic neurons that emit sharp voltage spikes are needed for neural-network hardware, for fast data processing with low power consumption. Conventional spintronic neurons, $i.e.$ spin-torque nano-oscillators (STNOs), emit sinusoidal waveforms, th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd73c3d12aac80d2021b094921fc9186

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání