Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Steven Labovitz"'
Publikováno v:
Photomask Technology 2008.
reporting the use of high sensitivity DUV transmission metrology as a means for detection of progressive transmission loss on mask and pellicle surfaces. We also report a use case for incoming reticle qualification based on DUV transmission uniformit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bb396b3a3f0dfd5ca885f63dfc76516
https://doi.org/10.1117/12.801558
https://doi.org/10.1117/12.801558
Publikováno v:
SPIE Proceedings.
A key feature of a photomask is the transmission (Tr) property of its many surfaces. Typical advanced 6" masks have 4 surfaces: back side Quartz (Qz), Front side pattern, inside pellicle and outside pellicle. In addition to the surfaces themselves th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::071404c9573ada689fb34e6dfc311cbc
https://doi.org/10.1117/12.798462
https://doi.org/10.1117/12.798462
Autor:
Eitan Zait, Vladimir Dmitriev, Guy Ben-Zvi, Erez Graitzer, Robert Birkner, Steven Labovitz, Klaus Böhm, Thomas Scheruebl
Publikováno v:
SPIE Proceedings.
It has been previously demonstrated that wafer CD uniformity can be improved via an ultrafast laser system. The system provides local CD Control (CDC) by writing inside the bulk of photomasks. Intra-field CD variation correction has been implemented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9680c0bcedeafd0e80abe183ae4e22a5
https://doi.org/10.1117/12.793054
https://doi.org/10.1117/12.793054
Publikováno v:
SPIE Proceedings.
Advanced wafer fabs are currently fabricating devices with 90nm and 65nm design rules using 193nm lithography. To meet the challenges at these sub-wavelength technology nodes, mask designers are using a variety of resolution enhancement techniques (R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d07ffbbdfd9a22d51e1a9c274074519
https://doi.org/10.1117/12.634078
https://doi.org/10.1117/12.634078
Autor:
Ken Mr. Buckmann, Long He, Marilyn Kamna, Steven Labovitz, Michael Kovalchick, Qi-De Qian, Jeff Farnsworth, Wen-Hao Cheng, Yulia Korobko, Wilman Tsai, Brian Irvine, R. Talevi
Publikováno v:
SPIE Proceedings.
Alternating Phase Shift Mask (APSM) reticles is critical to achieve sub 0.1 um poly gate lithography. Intrinsic APSM image inbalance can be resolved with various methods such as isotropic etch and aperture sizing, where positional line-shift can be r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb3baf457f813d4a6e4f05ed737b5ef1
https://doi.org/10.1117/12.410720
https://doi.org/10.1117/12.410720
Autor:
Steven Labovitz
Publikováno v:
WRPMD'99.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b653488c73f3a34dde4410c7f01c37
https://doi.org/10.1061/40430(1999)20
https://doi.org/10.1061/40430(1999)20
Autor:
Jeff Farnsworth, Scott Chegwidden, Giang T. Dao, Frederick T. Chen, Wilman Tsai, Marilyn Kamna, Steven Labovitz
Publikováno v:
SPIE Proceedings.
Fabrication of 0.18 micrometers generation clearfield logic device photomask with plasma etch was compared with wet etch method in current 0.25 micrometers mask technology. Spatial consistency between the resist develop and plasma etch modules was cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f86dea2061074e3a42bda1da3f05c77
https://doi.org/10.1117/12.328796
https://doi.org/10.1117/12.328796