Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Steven K. H. Sim"'
Autor:
E.H. Li, M. Gao, A. Shen, Margaret Buchanan, Yuzo Ohno, Hideo Ohno, Kevin F. Lee, Steven K. H. Sim, H. C. Liu
We present a study on a set of AlGaAs/GaAs quantum well infrared photodetectors with various barrier widths from about 100 to 500 A . At 77 K and for a large field-of-view (FOV) 300-K background operation, measured results on dark current, responsivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::545423b692502ea36127fd6e7f7bd7ba
https://doi.org/10.1016/s1350-4495(01)00067-6
https://doi.org/10.1016/s1350-4495(01)00067-6
Publikováno v:
Physics and Simulation of Optoelectronic Devices VII.
The tensile-strained barrier GaAsP/GaAs quantum well (QW) structures fabricated on GaAs substrate has a remarkable potential for novel properties of laser structures. In this structure, the GaAs QW layer is embedded with tensile-strained GaAsP barrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f56820ce4c34aaac4da8cdc20f230e05
https://doi.org/10.1117/12.356909
https://doi.org/10.1117/12.356909
Publikováno v:
SPIE Proceedings.
Antimonide (Sb) is said to be an emerging optoelectronic materials for both high speed and long wavelength electronics devices. Recently, there has been much research activities on antimonide based system. Among Group V elements, antimonide is of par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95551080e8daa8e6514975614b6dbb84
https://doi.org/10.1117/12.311021
https://doi.org/10.1117/12.311021
Publikováno v:
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368).
The subband of Al/sub x/In/sub 1-x/Sb/InSb quantum-well structure under the effect of interdiffusion were calculated. The model use the 14-band calculation and the effective Hamiltonian approach. The results show that the interband transition energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f73df3dd5e9de0822b01dd3a820a5d8
https://doi.org/10.1109/hkedm.1998.740179
https://doi.org/10.1109/hkedm.1998.740179