Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Steven James Hillenius"'
Autor:
J. Bude, J. Ning, P. J. Silverman, Conor S. Rafferty, K Evans-Lutterodt, Yi Ma, Steven James Hillenius, H. H. Vuong, J Mcmacken, H.-J. Gossmann, Frieder H. Baumann
Publikováno v:
Solid-State Electronics. 43:985-988
Large area capacitors were fabricated with doping and oxide thickness representative of an n-MOSFET channel region. Capacitance–voltage (C–V) measurements on these capacitors showed a systematic change in the accumulation capacitance when additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d967551efcee5a37306a87dba962be95
https://doi.org/10.1016/s0038-1101(99)00050-7
https://doi.org/10.1016/s0038-1101(99)00050-7
Autor:
J.L. Lentz, Steven James Hillenius, P.M. Zeitzoff, M.R. Pinto, S.A. Eshraghi, H.-H. Vuong, Conor S. Rafferty
Publikováno v:
IEEE Transactions on Electron Devices. 43:1144-1152
We present a model which simulates the trapping of arsenic and boron dopants at the silicon-silicon dioxide interface, and demonstrate that this model gives significantly more accurate doping profiles for a wide range of PMOS devices, as characterize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39dbd4640e5fd31ccccf4ed74085710
https://doi.org/10.1109/16.502426
https://doi.org/10.1109/16.502426
Autor:
D. J. Eaglesham, Dale C. Jacobson, J. M. Poate, E.J. Lloyd, A. Kamgar, Steven James Hillenius
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:416-419
High energy ion implantation has been utilized to fabricate profiled tubs and to create gettering sites in deep submicron CMOS devices in bulk and epitaxial Si. The isolation and latch-up characteristics have been measured and found to be superior to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1614600c8f70093522735c6c8edc226f
https://doi.org/10.1016/0168-583x(94)00531-1
https://doi.org/10.1016/0168-583x(94)00531-1
Publikováno v:
IEEE Transactions on Electron Devices. 42:2089-2095
The impact of several poly buffer LOCOS processing parameters on the integrity and defect density (yield) of the gate oxide has been investigated by correlating electrical and structural studies. We found that a thin PBL pad-oxide, in general, gives
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315a422ba5dc9a50ecc8ada403838ed8
https://doi.org/10.1109/16.477765
https://doi.org/10.1109/16.477765
Autor:
W.S. Lindenberger, Steven James Hillenius, H.-I. Cong, George K. Celler, R.L. Field, T. T. Sheng, L.E. Trimble, A. Kamgar
Publikováno v:
IEEE Transactions on Electron Devices. 39:640-647
CMOS dual-modulus, divide by 128/129, prescaler circuits were built in thin Si films on SIMOX (separation by implantation of oxygen) wafers. They operated at 6.2 GHz, which is 50% faster than control circuits built in bulk Si. Detailed electrical cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9017d6986d4deca9b5099589f77b2393
https://doi.org/10.1109/16.123490
https://doi.org/10.1109/16.123490
BF2implanted polycrystalline silicon gates with and without CoSi2: Microstructure and work functions
Autor:
T. T. Sheng, S. Lindenberger, H. S. Luftman, F. A. Baiocchi, R.L. Field, Steven James Hillenius, George E. Georgiou
Publikováno v:
Journal of Applied Physics. 69:1510-1517
The microstructure and metal‐silicon work function was evaluated for polycrystalline Si (poly‐Si) films (∼3500 A) implanted with BF2, with and without a CoSi2 superlayer. The poly‐Si implant doses were 2, 4, and 6×1015 cm−2, activated at 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef6b748418f64756bec38a70875ae60
https://doi.org/10.1063/1.347241
https://doi.org/10.1063/1.347241
Publikováno v:
IEEE Transactions on Electron Devices. 38:246-254
Submicrometer CMOS transistors require shallow junctions to minimize punchthrough and short-channel effects. Salicide technology is a very attractive metallization scheme to solve many CMOS scaling problems. However, to achieve a shallow junction wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d5a67f7042d3677817a8e047a7151a
https://doi.org/10.1109/16.69902
https://doi.org/10.1109/16.69902
Autor:
J. M. McKinley, George K. Celler, C. N. Granger, Don Monroe, Lourdes Pelaz, H.-J. Gossmann, D. Barr, F. A. Stevie, Dale Conrad Jacobson, Steven James Hillenius, J. Hergenrother, H. H. Vuong, Conor S. Rafferty, V. C. Venezia
Publikováno v:
Applied Physics Letters. 75:1083-1085
The dopant-defect interaction in silicon-on-insulator (SOI) material is studied for Si film thicknesses ranging from 60 to 274 nm, with regards to (1) boron pileup and (2) defect-induced boron clustering. Results are obtained on boron-implanted sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::573b7355e17fdb038b2f5fef113423e0
https://doi.org/10.1063/1.124604
https://doi.org/10.1063/1.124604
Autor:
H.-I. Cong, P.W. Diodato, Conor S. Rafferty, P.M. Zeitzoff, S.A. Eshraghi, M.R. Pinto, Steven James Hillenius, H.-H. Vuong
Publikováno v:
IEEE Transactions on Electron Devices. 45:991-993
TCAD tools were used to design and benchmark 0.25-/spl mu/m buried-channel PMOS (BCPMOS) versus surface-channel PMOS (SCPMOS), for both device and circuit performance. With optimized device designs, BCPMOS gives smaller gate delays than SCPMOS for IN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0f1f88b97431ed3348d521d76181d0
https://doi.org/10.1109/16.662818
https://doi.org/10.1109/16.662818
Publikováno v:
IEEE Electron Device Letters. 18:212-214
For gate oxides thinner than 40 /spl Aring/, conventional schemes of incorporating N in the oxides might become insufficient in stopping B penetration. By implanting N into the Si substrates with a sacrificial oxide layer; we have grown 25 /spl Aring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82dfa97b497a6e709878642961766c56
https://doi.org/10.1109/55.568768
https://doi.org/10.1109/55.568768