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pro vyhledávání: '"Steven J. Roerink"'
Autor:
Thierry de Vrijer, Bilal Bouazzata, Ashwath Ravichandran, Julian E. C. van Dingen, Paul J. Roelandschap, Koos Roodenburg, Steven J. Roerink, Federica Saitta, Thijs Blackstone, Arno H. M. Smets
Publikováno v:
Advanced Science, Vol 9, Iss 18, Pp n/a-n/a (2022)
Abstract In this paper the opto‐electrical nature of hydrogenated group IV alloys with optical bandgap energies ranging from 1.0 eV up to 2.3 eV are studied. The fundamental physical principles that determine the relation between the bandgap and th
Externí odkaz:
https://doaj.org/article/5a40a376169a47faa39d1ba2dfca3913
Publikováno v:
Solar Energy Materials and Solar Cells. 225:111051
Bandgap energy profiling is applied in a variety of materials for photovoltaic technologies, such as chalcogenides, III–V materials and perovskites. Bandgap profiling of the absorber layer is used to fight the fundamental loss mechanisms imposed by