Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Steven H. Groves"'
Autor:
K.M. Molvar, Eric A. Dauler, K. A. McIntosh, Simon Verghese, G.M. Smith, Katharine Jensen, L.J. Mahoney, Joseph P. Donnelly, E.K. Duerr, Christopher J. Vineis, Douglas C. Oakley, D. C. Shaver, P.I. Hopman, Steven H. Groves
Publikováno v:
IEEE Journal of Quantum Electronics. 42:797-809
For Geiger-mode avalanche photodiodes, the two most important performance metrics for most applications are dark count rate (DCR) and photon detection efficiency (PDE). In 1.06-mum separate-absorber-avalanche (multiplier) InP-based devices, the prima
Autor:
Leo J. Missaggia, Joseph P. Donnelly, J. Bailey, Gary E. Betts, Frederick J. O'Donnell, J. N. Walpole, Steven H. Groves, A. Nagoleone
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 45:1280-1287
High-performance semiconductor continous-wave (CW) sources are demonstrated in this paper, which include a Fabry-Perot (FP) laser oscillator (LO) with relative intensity noise (RIN)
Autor:
A. Napoleone, Steven H. Groves, L.J. Mahoney, E.K. Duerr, S.D. Calawa, Douglas C. Oakley, D. C. Shaver, K.M. Molvar, Joseph P. Donnelly, K. A. McIntosh
Publikováno v:
Applied Physics Letters. 81:2505-2507
Geiger-mode (photon-counting) operation at 1.06 μm has been demonstrated with InGaAsP/InP avalanche photodiodes operated at room temperature. A photon detection efficiency of 33% was measured on uncoated detectors, representing an internal avalanche
Autor:
A. Napoleone, Leo J. Missaggia, Joseph P. Donnelly, Stephen R. Chinn, P. J. Taylor, Steven H. Groves, C.T. Harris, James N. Walpole, Robin K. Huang, Jason J. Plant, Robert J. Bailey
Publikováno v:
IEEE Photonics Technology Letters. 14:756-758
A high brightness semiconductor diode laser structure, which utilizes a slab-coupled optical waveguide region to achieve several potentially important advances in performance, is proposed and experimentally demonstrated using a simple rib waveguide i
Autor:
V. Diadiuk, Woo Young Choi, Steven H. Groves, Brian R. Bennett, Ning Pan, J. H. Smet, Lung-Han Peng, S. C. Palmateer, Tom P. E. Broekaert, Clifton G. Fonstad
Publikováno v:
Journal of Applied Physics. 72:3664-3669
Infrared absorption and photocurrent measurements have been applied to study the photoresponse below the band gap of indium gallium arsenide (In0.53Ga0.47As) grown lattice matched to Fe‐doped semi‐insulating indium phosphide (InP) substrates by v
Autor:
William D. Goodhue, A. Napoleone, P. J. Taylor, Joseph P. Donnelly, S. S. Choi, Robert J. Bailey, Steven H. Groves, R.E. Reeder
Publikováno v:
IEEE Photonics Technology Letters. 12:974-976
All-active tapered-amplifier power splitters (TAPS) consisting of a single-mode input waveguide, which acts as a preamplifier, a two-dimensional (2-D) diffraction section, which amplifies the signal during the splitting process, and N single-mode out
Publikováno v:
IEEE Photonics Technology Letters. 12:311-313
A model for the transmission and four-wave mixing (FWM) conversion efficiency of InGaAsP-InP passive quantum-well (QW) waveguides which includes the effect of an additional nonlinear loss due to the accumulation of photogenerated free carriers is int
Autor:
Leo J. Missaggia, Stephen R. Chinn, M.W. Wright, Joseph P. Donnelly, Zong-Long Liau, P. J. Taylor, Steven H. Groves, James N. Walpole
Publikováno v:
IEEE Photonics Technology Letters. 12:257-259
A Gaussian lateral current-injection profile is approximated by a quasi-random pattern of electrically conducting and insulating regions. This pattern is used for the p-type contact in a laser with a 2.1-mm-long tapered gain region and operating near
Autor:
Dyfrig A. Hughes, David Cohen, Frank David John Dunstan, Philip A. Routledge, Fasihul Alam, Steven H. Groves
Publikováno v:
Value in Health. 12(3)
Autor:
Joseph P. Donnelly, A. Napoleone, Leo J. Missaggia, Robert J. Bailey, R.E. Reeder, C.C. Cook, Steven H. Groves, James N. Walpole
Publikováno v:
IEEE Photonics Technology Letters. 10:1377-1379
High-power diode lasers consisting of a a tapered region have waveguide section coupled to fabricated in 1.5-/spl mu/m InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high intensity input into the taper section