Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Steven E. Laux"'
Autor:
Peter M. Asbeck, Yuan Taur, Steven E. Laux, Massimo V. Fischetti, Ting-Wei Tang, Seonghoon Jin, Nobuyuki Sano, Mark J. W. Rodwell
Publikováno v:
ECS Transactions. 28:15-26
In our attempts to scale FETs to the 10 nm length, alternatives to conventional Si CMOS are sought on the grounds that: 1. Si seems to have reached its technological and performance limits and 2. The use of alternative high-mobility channel materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b09eae4d8e703dda10145015053950c
https://doi.org/10.1149/1.3375584
https://doi.org/10.1149/1.3375584
Autor:
Massimo V. Fischetti, Y. Taur, Mark J. W. Rodwell, Steven E. Laux, P. Asbeck, Ting-Wei Tang, Seonghoon Jin, Nobuyuki Sano
Publikováno v:
Journal of Computational Electronics. 8:60-77
In our attempts to scale FETs to the 10 nm length, alternatives to conventional Si CMOS are sought on the grounds that: (1) Si seems to have reached its technological and performance limits and (2) the use of alternative high-mobility channel materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4833122f49a1f92e6e22b2c2ff1feb9
https://doi.org/10.1007/s10825-009-0277-z
https://doi.org/10.1007/s10825-009-0277-z
Autor:
Steven E. Laux
Publikováno v:
IEEE Transactions on Electron Devices. 54:2304-2320
The switching times of ultrathin body semiconductor-on-insulator n-channel field-effect transistors with 22- and 17-nm gate lengths are simulated, and the results obtained for four high mobility substrates (Ge, GaAs, InP, and In0.53Ga0.47As) are comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5a33ae8b177b3dd24fd84038df86035
https://doi.org/10.1109/ted.2007.902864
https://doi.org/10.1109/ted.2007.902864
Publikováno v:
IEEE Transactions on Electron Devices. 52:614-617
We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional (2-D) electrostatics considerations pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb077b1b69b5dfee0df282a781f4ef65
https://doi.org/10.1109/ted.2005.844792
https://doi.org/10.1109/ted.2005.844792
Publikováno v:
Journal of Computational Electronics. 3:287-293
We review briefly some aspects of the history of Monte Carlo simulations of electronic transport in semiconductors. In the early days their heavy computational cost rendered them suitable only to study problems of pure physics, as simpler models prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c39dec626b158f5a1b969a0d51d58ebb
https://doi.org/10.1007/s10825-004-7063-8
https://doi.org/10.1007/s10825-004-7063-8
Autor:
Steven E. Laux
Publikováno v:
Journal of Computational Electronics. 3:379-385
The two-dimensional device simulation program QDAME has been extended to permit arbitrary crystallographic orientation. A ballistic formulation of quantum transport utilizing parabolic, ellipsoidal conduction bands is adopted and solved self-consiste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::448b9486cbb013f09ebbe2d9f7918d79
https://doi.org/10.1007/s10825-004-7081-6
https://doi.org/10.1007/s10825-004-7081-6
Publikováno v:
Journal of Applied Physics. 95:5545-5582
A two-dimensional device simulation program which self consistently solves the Schrodinger and Poisson equations with current flow is described in detail. Significant approximations adopted in this work are the absence of scattering and a simple six-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5863fd42b115ae2e9581f8791b8dc6c2
https://doi.org/10.1063/1.1695597
https://doi.org/10.1063/1.1695597
Publikováno v:
Journal of Computational Electronics. 2:105-108
We describe the two-dimensional simulation of a bent resonant tunneling diode structure which displays vortices in its total current density pattern over a range of applied bias. In contrast, a double gate n-MOSFET is shown where such circulation exi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf759167c5341975bfe63c67b2be3847
https://doi.org/10.1023/b:jcel.0000011407.24435.d9
https://doi.org/10.1023/b:jcel.0000011407.24435.d9
Publikováno v:
IEEE Transactions on Nanotechnology. 1:255-259
We present an algorithm for self-consistent solution of the Poisson and Schrodinger equations in two spatial dimensions with open-boundary conditions to permit current flow. The algorithm works by discretely sampling a device's density of states usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecc0ecf6a8d4b1eee15f6365c3b013ae
https://doi.org/10.1109/tnano.2002.807388
https://doi.org/10.1109/tnano.2002.807388
We present a TCAD (Technology Computer Aided Design) compatible multiscale model of phonon-assisted band-to-band tunneling in semiconductors, which incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eae15aaebdc18cb50b43f3562377ea3e
http://arxiv.org/abs/1407.6096
http://arxiv.org/abs/1407.6096
