Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Steven Callender"'
Autor:
Steven Callender, Abhishek Agrawal, Amy Whitcombe, Ritesh Bhat, Mustafijur Rahman, Chun C. Lee, Peter Sagazio, Georgios C. Dogiamis, Brent R. Carlton, Christopher Hull, Stefano Pellerano
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:3582-3598
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f25691017f4e5eaf5cc4e99e392a7c
https://doi.org/10.1109/jssc.2022.3208510
https://doi.org/10.1109/jssc.2022.3208510
Autor:
Abhishek Agrawal, Amy Whitcombe, Woorim Shin, Ritesh Bhat, Somnath Kundu, Peter Sagazio, Hariprasad Chandrakumar, Thomas Brown, Brent Carlton, Christopher Hull, Steven Callender, Stefano Pellerano
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::806452198d3271ef65d65e09d6acd466
https://doi.org/10.1109/isscc42615.2023.10067439
https://doi.org/10.1109/isscc42615.2023.10067439
Autor:
Yanjie Wang, Kun-Da Chu, Stefano Pellerano, Jacques C. Rudell, Christopher D. Hull, Steven Callender
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:1502-1513
This article presents the design of a dual-mode V-band power amplifier (PA) that enhances the efficiency at power back-off (PBO) using load modulation. The PA utilizes a reconfigurable two-/four-way power combiner to enable two discrete modes of oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c611957ce905565a78b6f5df43542da2
https://doi.org/10.1109/jssc.2021.3063032
https://doi.org/10.1109/jssc.2021.3063032
Autor:
Steven Callender, Amy Whitcombe, Abhishek Agrawal, Ritesh Bhat, Mustafijur Rahman, Chun C. Lee, Peter Sagazio, Georgios Dogiamis, Brent Carlton, Mark Chakravorti, Stefano Pellerano, Christopher Hull
Publikováno v:
2022 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c63a05e11e790ac3ade54c37a60e3f3
https://doi.org/10.1109/isscc42614.2022.9731663
https://doi.org/10.1109/isscc42614.2022.9731663
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:1266-1273
This paper presents the design and optimization of an $E$ -band power amplifier (PA) implemented in Intel’s 22FFL FinFET process. Layout optimization and characterization of the PA unit cell yielding optimal millimeter-wave (mmW) performance of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2e757d4cd33b43a384f457dede14e8a
https://doi.org/10.1109/jssc.2019.2899493
https://doi.org/10.1109/jssc.2019.2899493
Autor:
Peter Sagazio, Christopher D. Hull, Oner Orhan, Steven Callender, Woorim Shin, Stefano Pellerano
Publikováno v:
IEEE Communications Magazine. 56:186-192
As 5G takes advantage of the vast amount of available spectrum in the mmWave bands, system and circuit designers face new challenges to create efficient, high-performance phased array transceivers. This article covers scaled CMOS circuit and system t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d0a4abaedd9d5c4f6dbb8b4cdd5a86f
https://doi.org/10.1109/mcom.2018.1701374
https://doi.org/10.1109/mcom.2018.1701374
Autor:
Yanjie Wang, Christopher D. Hull, Stefano Pellerano, Jacques C. Rudell, Steven Callender, Kun-Da Chu
Publikováno v:
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents the design of a dual-mode V-band PA with efficiency enhancement at power back-off via load modulation. The design utilizes a reconfigurable 2/4-way non-uniform power combiner to enable two discrete modes of operation – full powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbfc0c8335fc7a8740b46487077c04c2
https://doi.org/10.1109/rfic49505.2020.9218381
https://doi.org/10.1109/rfic49505.2020.9218381
Publikováno v:
CICC
Intel's 22FFL is the comprehensive FinFET technology offering the best-in-class RF transistors achieving $f_{t}$ and $f_{max}$ above 300GHz and 450GHz, respectively. The addition of a high-power RF device (HyPowerFF) and enhanced mmWave BEOL support
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350dd4ddaf949cc4df431642231b7567
https://doi.org/10.1109/cicc48029.2020.9075914
https://doi.org/10.1109/cicc48029.2020.9075914
Autor:
Mark Chakravorti, Arnaud Lucres Amadjikpe, Woorim Shin, Stefano Pellerano, Peter Sagazio, William J. Lambert, Steven Callender, Abhishek Agrawal, Christopher D. Hull, Divya Shree Vemparala, Yanjie Wang, Somnath Kundu, Satoshi Suzuki, Farhana Sheikh, Brent Carlton, Robert Flory
Publikováno v:
ISSCC
Fifth-generation cellular communication standards (5G) target Gb/s data-rates, pushing the industry beyond the sub-6GHz bands. Tens of GHz of spectrum are available in the frequency bands from 30 to 300GHz. To maintain acceptable link budgets with su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f71f56eec6759915ddcd6e02689c992e
https://doi.org/10.1109/isscc.2019.8662496
https://doi.org/10.1109/isscc.2019.8662496
Publikováno v:
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents the design of an E-band PA in a 22nm FinFET CMOS process. The design utilizes device neutralization and low-k transformers for gain and bandwidth enhancement. A holistic design methodology is employed to further optimize PA effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96f1de21aff99e8c21dfd62288b65a42
https://doi.org/10.1109/rfic.2018.8428993
https://doi.org/10.1109/rfic.2018.8428993